1200-V IGBTs Offer Reduced Switching and Conduction Losses
Thu, 09/01/2011 - 12:10pm
International Rectifier announced the introduction of a family of 1200-V Insulated Gate Bipolar Transistors (IGBTs) for induction heating, uninterruptible power supplies (UPS) solar and welding applications. The new family of 1200-V IGBTs uses thin wafer Field-Stop Trench technology that is asserted to significantly reduce switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies. These devices are further optimized for applications that do not require short-circuit capability such as UPS, solar inverters, and welding, and complement the company’s products with 10 microsecond short circuit capability for motor drive applications. Covering a broad current range from 20 A to 50 A as packaged devices and up to 150 A for die products, performance characteristics include wide square reverse bias safe operating area (RBSOA), positive VCE(on) temperature coefficient, and low VCE(on) to reduce power dissipation and achieve higher power density. In addition, devices are available with or without an internal ultra-fast soft recovery diode.