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Silicon Carbide Schottky Diodes Tout Low Forward Voltage, Fast Recovery Time

Tue, 04/12/2011 - 2:06pm
Silicon carbide Schottky diodeRohm Semiconductor announced the availability of the SCS1xxAGC Series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD). According to the company, this new class of SiC diodes offers industry-leading low forward voltage and fast recovery time, leading to improved power conversion efficiency in applications such as PFC/power supplies, solar panel inverters, uninterruptible power supplies, and air conditioners. Low VF reduces conduction loss while the ultra-short reverse recovery time (15 ns, typical) enables high-speed switching and minimizes switching loss.

Rohm Semiconductor
858-625-3600, www.rohm.com/us
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