Normally-off SIC JFET Family Handles up to 50 kW
Mon, 04/11/2011 - 1:05pm
SemiSouth Laboratories, Inc. has announced that it is shipping its latest range of vertical trench JFETs – including a normally-off family of devices to handle up to 50 kW – in commercial volume quantities. The company asserts its proprietary and patented self-aligned JFET chip design enables up to 10 times smaller die size when compared to silicon super-junction MOSFETs or the latest trench IGBTs. The company also holds the record for the lowest 1200V power transistor specific on-resistance - under 2.5 m?/cm². The SJEP120R100, SJEP120R063 and SJEP170R550 Normally-OFF trench silicon carbide power JFETs are compatible with standard gate drive circuitry and feature a positive temperature coefficient for ease of paralleling. The voltage-controlled devices also have a low RDS(on)max, low gate charge and low intrinsic capacitance. The SJEP120R100 with an Rds(on) of 100 mOhm enables extremely fast switching with no ‘tail’ current up to its maximum operating temperature of 175degC, and the SJEP120R063, with an Rds(on) of 63 mOhms can enable switching losses of only 353 µJ at 24 A. These JFETs offer a blocking voltage of 1200 V and exhibit temperature-independent switching behavior. This latter device is being designed in by a number of Solar Inverter companies who are achieving product efficiencies of 98 to 99 percent.