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High-voltage, SiC Power Switch Features Logic-level Gate Control

Thu, 04/14/2011 - 12:02pm
high voltage SiC power switchCISSOID introduced a high-temperature silicon carbide high-voltage switch with seamless gate control through a simple logic-level 0/5V. CHT-JUPITER is a 600-V normally-off switch rated for 1-A drain current at 225°C. It includes a silicon carbide device, and it is packaged in a hermetically sealed TO-254 metal package for operation from -55°C up to +225°C. Its on-resistance ranges from 0.7 Ohms at 25°C to 1.25 Ohms at 225°C, and its input capacitance is typically 430 pF. The gate leakage and drain off currents are respectively 160 nA and 250 µA at 225°C. The device is able to be driven by a 0/5V logic-level signal, which reduces the complexity of the driver stage. The company asserts CHT-JUPITER greatly simplifies the design of medium-power, high-voltage converters such as switched mode power supplies (SMPS) and motor drives that have to operate in extreme environments. Pricing starts at $649/unit up to 200 units.

CISSOID
32 10 48 92 10, www.cissoid.com 

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