Power MOSFET Family Boasts Efficiency Improvement Up to 2 Percent
Tue, 02/01/2011 - 7:01am
International Rectifier introduced a family of DirectFET plus power MOSFETs featuring the company’s new generation of silicon that is asserted to set a new standard in efficiency for 12-V input synchronous buck applications including next-generation servers, desktops, and notebooks. The IRF6811 and IRF6894, significantly reduce on-state resistance (RDS(on)) and gate charge (Qg) compared to previous generation devices to improve efficiency up to 2 percent, according to the company. In addition, the devices offer ultra low gate resistance (Rg) enabling further efficiency improvement by minimizing switching losses in DC-DC converters. The IRF6811 control MOSFET is available in a small can while the IRF6894 synchronous MOSFET is offered in a medium can. The 25-V DirectFET plus pair combines desirable RDS(on) and Rg, combined with low charge to minimize conduction and switching losses. The IRF6894 also features a monolithically integrated Schottky that reduces losses associated with body diode conduction and reverse recovery.