Fairchild Semiconductor’s FDFME3N311ZT is designed as a single package solution for a boost topology in cellular handset and other ultra portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected Schottky diode features low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 1.6 x 1.6 mm thin package offers desirable thermal performance, and it is suited to switching and linear mode applications.

Fairchild Semiconductor
800-341-0392, www.fairchildsemi.com
 

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