Fairchild Semiconductor’s FDFME3N311ZT is designed as a single package solution for a boost topology in cellular handset and other ultra portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected Schottky diode features low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 1.6 x 1.6 mm thin package offers desirable thermal performance, and it is suited to switching and linear mode applications.
Most Popular on ECNmag.com:
Boost Switch Addresses High-frequency Step-up DC/DC Designs
Wed, 10/14/2009 - 9:02am