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MOSFETs Combine Process Technology with Planar Cell Structure

Mon, 01/26/2009 - 8:36am

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ec93ic402awebCombining process technology with planar cell structure technology, a series of high-voltage pi-MOS VII MOSFETs from Toshiba is intended for AC/DC and ballast applications. The first seven 500-V devices in the series provide a selection of drain current from 5 A to 15 A (max.) with R(DS)(ON) from 1.50 O to 0.30 O (max.). Six 600-V devices include a drain current ranging from 3.5 A to 13 A (max.) with R(DS)(ON) from 2.20 O to 0.43 O (max.). Dimensions are 10 mm × 4.50 mm × 17.80 mm. From $0.75.

Toshiba America Electronic Components
949-481-5867, www.toshiba.com 

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