Advertisement
Product Releases
Advertisement

Power MOSFETs Offer Low On-Resistance

Tue, 12/16/2008 - 5:04am

LISTED UNDER:

Vishay SiS426DNBased on TurboFET technology, Vishay Intertechnology’s 20-V SiS426DN and SiR496DP and 30-V Si7718DN and Si7784DP N-channel power MOSFETs exhibit “on-resistance times gate charge” of 76.6 mO-nC at 4.5 V and 117.6 mO-nC at 10 V (20-V) and 112.34 mO-nC at 4.5 V and 180 mO-nC at 10 V (30-V). The 20-V units offer on-resistance of 5.8 mO at 4.5 V and 4.2 mO at 10 V and typical gate charge of 13.2 nC at 4.5 V and 28 nC at 10 V. The 30-V components exhibit on-resistance of 8.2 mO at 4.5 V and 6 mO at 10 V and typical gate charge of 13.7 nC at 4.5 V and 30 nC at 10 V. The halogen-free chips act as the high-side MOSFET in synchronous buck converters for notebook computers, voltage regulator modules (VRMs), servers, and other systems using point-of-load (POL) power conversion. Pricing starts at $0.32 in 100,000 quantities.

Vishay Intertechnology
619-336-0860, www.vishay.com

Advertisement

Share this Story

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading