SiC MESFETs Surpass Silicon, GaAs Devices
Cree, Inc. unveiled its 48 V silicon carbide (SiC) RF MESFETs that are optimized for applications such as wideband Mil/Aero and defense communications, Class A and A/B amplifiers, and wireless broadband applications. Properties include high breakdown voltage, high saturated electron drift velocity and high thermal conductivity, surpassing silicon or gallium arsenide. The 10 W Model CRF24010 has a 15 dB gain and junction-to-case thermal resistance of 3.6°C/W with operation up to 2.7 GHz. The 60 W CRF24060 has a 13 dB gain and a junction-to-case thermal resistance of 1.4°C/W with operation up to 2,400 MHz.