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SiC MESFETs Surpass Silicon, GaAs Devices

Tue, 10/07/2008 - 1:25pm

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Cree SiCP1270025-Cree-150Cree, Inc. unveiled its 48 V silicon carbide (SiC) RF MESFETs that are optimized for applications such as wideband Mil/Aero and defense communications, Class A and A/B amplifiers, and wireless broadband applications. Properties include high breakdown voltage, high saturated electron drift velocity and high thermal conductivity, surpassing silicon or gallium arsenide. The 10 W Model CRF24010 has a 15 dB gain and junction-to-case thermal resistance of 3.6°C/W with operation up to 2.7 GHz. The 60 W CRF24060 has a 13 dB gain and a junction-to-case thermal resistance of 1.4°C/W with operation up to 2,400 MHz.

Cree, Inc.
919-313-5505, www.cree.com

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