Silicon Carbide Power Transistors Offer Improved Performance
Operating in motor drives, DC/DC conversion, welding systems and power electronics, TranSiC’s silicon carbide (SiC) BITSIC-1220 and BITSIC-1206 NPN power bipolar junction transistors operate at 225°C, have negligible storage time delay, provide independent switching, handle short-circuits and have immunity to cosmic rays. The 3.40 mm × 1.85 mm BITSIC-1206 offers collector current from 6 A to 20 A and base current from 1 A to 10 A, and the 5.40 mm × 3.40 mm BITSIC-1220 has collector current from 20 A to 60 A and base current from 3 A to 20 A. The transistors exhibit collector cut-off current of 100 nA, current gain of 35 nA, collector-emitter saturation voltage from 0.8 V to 1.5 V at 700 pF (1206) or 2,300 pF (1220) capacitance and base-emitter saturation voltage from 3.1 V to 3.2 V at 2,200 pF capacitance (1206) or 7,300 pF (1220). The devices have emitter-base voltage of 20 V and collector-emitter and collector-base voltages of 1,200 V.
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