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Radiation Hardened MOSFETs Are Driven Directly From CMOS/TTL Logic Circuitry

Thu, 06/05/2008 - 6:15am

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radiation hard logic level MOSFETsInternational Rectifier expanded its portfolio of RAD-Hard Logic Level gate drive MOSFETs with the introduction of 60V, 100V and 250V MOSFETs for switch mode power supplies (SMPS), satellite power distribution systems and resonant power converters in high-reliability applications. Compared to bipolar transistors, these RAD-Hard MOSFETs can be driven directly from CMOS/TTL logic circuitry, eliminating the need for intermediate component. Low on- state resistance (RDS(on)), fast switching and small size, make the new MOSFETs alternatives to traditional bipolar devices. The extended family of MOSFETs includes N and P channel in single and multi-chip configurations offered in a range of through-hole and surface mountpackages including SMD-0.5, SMD-2, LCC-28, 14 lead flat pack, TO-205AF, Low-Ohmic TO-257AA, and MO-036AB. The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.

International Rectifier
800-981-8699, www.irf.com

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