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Power MOSFETs Offer High Current Density

Sat, 06/28/2008 - 4:34am

DirectFET MOSFETWith a footprint 40% smaller than a standard SO-8 and a height of 0.7 mm, a family of 30-V DirectFET MOSFETs enable a smaller footprint and higher power density in synchronous buck converter designs. The IRF6724M, IRF6725M, IRF6726M, and IRF6727M have a common MT and MX footprint as previous generation devices to allow easy migration. Features of the series include an RDS(on) from as low as 1.2 to 5.1 mO at 10 V and 1.8 to 8.5 mO at 4.5 V , with a QG from 11 to 49 nC and QGD from 3.7 to 16 nC. 

International Rectifier
310-726-8512, www.irf.com

 

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