Advertisement
Product Releases
Advertisement

GaN HEMTs Target WiMAX Applications

Thu, 06/05/2008 - 8:48am

CGH55015F and CGH55030F GaN HEMTPresented as the first such devices of their type, the 15- and 30-W CGH55015F and CGH55030F gallium nitride (GaN) HEMT transistors from Cree are intended for use in WiMAX applications covering the 4.9 to 5.8 GHz frequency band. Providing a four-fold increase in efficiency compared with similar GaAs MESFET devices, the transistors also have a linearity of better than 2.5% EVM at average power under a WiMAX signal at 25% drain.

Cree
919-313-5505, www.cree.com 

Advertisement

Share this Story

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading