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GaN Power Transistor Addresses 2.5 GHz and 3.5 GHz Markets

Tue, 04/01/2008 - 6:27am

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GaN Power Transistor Addresses 2.5GHz and 3.5GHz MarketswebConsisting of a broadband DC to 4GHz GaN-on-Si HEMT in a thermally-enhanced plastic package, the NPT1004 delivers up to 45W at 28V for high PAR and pulsed applications, up to 5W for 2.5 GHz to 3.5 GHz WiMAX applications, and 4.5W for 3.3 GHz to 3.5 GHz WiMAX applications. The Pb-free, RoHS-compliant device suits high peak to average power amplifiers for WiMAX and systems using pulsed waveforms such as in radar, telemetry, and medical applications. The 1,000-unit price is $29, with lead time from stock to ten weeks.

Nitronex
919-807-9100, www.nitronex.com

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