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TrenchFET power MOSFET Achieves Lowest On-Resistance

Mon, 03/31/2008 - 8:55am

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Si7192DP MOSFETWIth an on-resistance/gate charge FOM of 98 (presented as a record for any VDS = 30V, VGS = 20V SO-8-size part) and a maximum on-resistance of 2.25 mO at a 4.5-V gate drive voltage, the Vishay Siliconix Si7192DP TrenchFET power MOSFET is presented as having the best performance for a device of its type. The n-channel device comes in a PowerPAK SO-8 package be used as the low-side MOSFET in synchronous buck converters, in secondary synchronous rectification, and OR-ing applications. Featurers include a maximum power dissipation of 104W and a continuous drain current of 60 A at 25°C with a typical thermal resistance, junction ro ambient, of 15 °C/W. Pricing for U.S. delivery in 100,000-piece quantities is $0.85.

Vishay Intertechnology
619-336-0860, www.vishay.com 

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