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SiC MESFETs Rival Silicon, GaAs Devices

Thu, 03/06/2008 - 4:40am

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CRF24060 MESFETOptimized for applications such as wideband MIL/Aero and defense communications, Class A and A/B amplifiers, and wireless broadband applications, Cree’s 48V silicon carbide (SiC) RF MESFETs have desirable properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. The 10W CRF24010 has a 15dB gain and junction-to-case thermal resistance of 3.6°C/W with operation up to 2.7GHz. The 60W CRF24060 has a 13dB gain and a junction-to-case thermal resistance of 1.4°C/W with operation up to 2,400 MHz.

Cree, Inc
919-313-5505 www.cree.com

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