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40V Synchronous Rectifier Enables High Efficiency In Switching Designs

Mon, 03/24/2008 - 10:24am

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Fairchild Semiconductor's 40V breakdown DC/DC synchronous rectifier for power supplies such as DC-DC brick modules and servers features desirable RDS(ON) and total gate charge (QG), and provides 20 percent lower Figure of Merit (FOM) compared to other 40V MOSFET solutions, according to the company. It comes in an industry standard and green 5 mm × 6 mm MLP package. The company's PowerTrench MOSFET process technology enables high output power levels without increasing the solution footprint. It produces low values for Miller charge (QGD), RDS(ON) and QG, and raises the gate-source charge to gate-drain charge (QGS:QGD) ratio to above one. These result in desirable switching performance and help avoid shoot-through. The FDMS8460’s ultra-low RDS(ON) of 2.2 mOhm max and low QGD of 10 nC allows reductions in conduction losses and switching losses. This increases the drain current through the device to improve efficiency and to reduce heat (conduction loss). Its 40V MOSFET rating is appropriate for the 5V and the 12V output rail voltages typically required in today’s DC/DC applications. The FDMS8460 uses lead-free (Pb-free) terminals and has been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020.

Fairchild Semiconductor
888-522-5372, www.fairchildsemi.com

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