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Power MOSFET with low, micro-Ohm ON Resistance

Mon, 12/03/2007 - 6:38am

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STMicroelectronics' STV300NH02L power MOSFET features low, microOhm ON-resistanceSTMicroelectronics' STV300NH02L power MOSFET features low, micro-Ohm ON-resistance intended to reduce losses and increase efficiency in demanding power supply systems. This new high-current N-channel device is intended particularly for the paralleling configuration power supplies that are widely used in server applications. The company's ribbon-bonding technology offers a low typical Rds(on) of 800 micro-Ohms (0.8-µOhm). The 20V device, which is also suitable for reducing secondary rectification losses in high-efficiency DC DC converters, provides protection under short-circuit conditions, with a low turn-off time. The STV300NH02L is available in a PowerSO-10 package, priced at $4.50 in quantities of 1,000 pieces.

STMicroelectronics
(781) 891-2650, www.st.com

Click here for more information: www.st.com/pmos.

 

 

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