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X-band GaN HEMT for RADAR and Medical Applications

Wed, 06/06/2007 - 6:03am

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ec77ic353aa.jpgToshiba America Electronic Components, Inc. (TAEC) and its parent company, Toshiba Corp., announced the companies’ first commercially available gallium nitride (GaN) semiconductor high electron mobility transistor (HEMT). The GaN HEMT is an X-band device targeted for radar and medical applications. The TGI8596-50 is an internally matched GaN HEMT power amplifier that operates in the 8.5 GHz to 9.6 GHz range with output power of 50W. The device features a three-dB compression point of 47.5 dBm typ., linear gain of 9.0 dB typ., and drain current of 4.5A typ. (with a supply voltage of 24V at 25oC). Targeted applications for this device include radar systems and medical applications, such as use in oncology.

Toshiba America Electronic Components, Inc.
408-526-2400, www.toshiba.com 

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