pulsed power transistorM/A-COM Technology Solutions Inc. (Lowell, MA) announced a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications. The MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized GaN on Silicon Carbide RF power transistors optimized for a variety of RF power amplifier applications. The devices provide a typical 17 W of peak output power with 15.5 dB of power gain and 63 percent efficiency.  These transistors are assembled using state of the art wafer fabrication processes and provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. Operating between the DC-3.5 GHz frequency range, the devices feature:

  • High voltage breakdowns.
  • Mean time to failure (MTTF) of 600 years.
  • Enhanced flanged (Cu/W) and flangeless (Cu) ceramic packages which provide desirable thermal performance.

For more information, visit www.macom.com