GaN transistorsCree has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) for use in 1.2 GHz to 1.4GHz L-Band radar amplifier systems: the 250-W CGHV14250 and the 500-W CGHV14500. Featuring what is asserted to be the highest known L-Band efficiency performance at 85°C, high power gain performance, and wide bandwidth capabilities, the new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz, including: tactical air navigation systems (TACAN), identification: friend or foe (IFF) systems, and other military telemetry systems. Based on the company’s 50-V 0.4µ GaN on SiC foundry process, these new GaN HEMTs for L-Band radar systems are positioned as providing engineers with excellent power and small signal performance, are internally pre-matched on the input, and are available in ceramic/metal flange and pill packages that are much smaller than competing gallium arsenide (GaA) or silicon (Si) RF technology, enabling enhanced design flexibility. The 250-W CGHV14250 features 330-W typical output power, 18-dB power gain, and 77 percent typical drain efficiency. The 500-W CGHV14500 features 500-W typical output power, 17 dB power gain, and 70 percent typical drain efficiency. Both the 250W and 500W GaN HEMTs feature 0.3dB pulsed amplitude droop. 

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