Cree, Inc. introduced an all-SiC power module. The new high frequency module, rated at 100-A current handling and 1200-V blocking, allows higher efficiency, compact and lighter weight systems that can, according to the company, result in lower total system costs compared to conventional silicon-based technologies. The module includes SiC MOSFETs and SiC Schottky diodes in a 50-mm half-bridge configuration rated to 150°C maximum junction temperature. The SiC components enable the module to be operated at exceptionally high switching frequencies that can reduce the size, weight and cost of the power conversion system. The new power module has demonstrated up to 100-kHz switching frequency. Target applications include high power converters, industrial motor drives, solar inverters and uninterruptible power supplies.

Cree, Inc.
(919) 313-5300, www.cree.com

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