The new infrared Mini Midled from Osram Opto Semiconductors is 0.9 mm high, producing a narrow and intense beam of infrared light that provides the highest radiant intensity of 60 milliwatts per steradian (mW/sr) at 100 milliamperes (mA). This low-profile, surface-mountable emitter is ideal for proximity sensors and light barriers in devices where space is limited.

The key advantage of the new Mini Midled is its half-angle of 17°. This is achieved by focusing the light with a metalized reflector integrated into the device. This new infrared LED offers an extremely high output power despite its exceptionally small dimensions of 2.3 x 1.95 x 0.9 mm.

The Mini Midled is the second SMT device from Osram Opto Semiconductors utilizing MID (Molded Interconnected Device) technology, complementing the existing 1.6 mm high Midled.

Small and powerful infrared diodes with a wavelength of 850 nm offer major benefits for applications that require high radiant intensity with little space. Typical applications include light barriers, smart phones and optical touch screens.

Osram Opto Semiconductors