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Power

Current-sensing IC boosts overall system efficiency

March 21, 2014 11:51 am | International Rectifier | Product Releases | Comments

International Rectifier (El Segundo, CA) announced the introduction of the robust IR25750 general-purpose current-sensing IC available in an ultra-compact SOT23-5L package that boosts overall system efficiency while delivering dramatic space savings....

LISTED UNDER: Power
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Load switch offers low on-resistance and 4-A maximum continuous current

March 20, 2014 12:00 pm | Advanced Power Electronics Corp. USA | Product Releases | Comments

Advanced Power Electronics Corp. (San Jose, CA) launched a small load switch with controlled turn on and very low on-resistance. The APE8937-HF-3 load switch contains one N-channel MOSFET that can

LISTED UNDER: Power Management | Power

JEDEC-qualified 600-V GaN-on-Silicon family includes PQFN-packaging, smaller die sizes

March 17, 2014 6:06 pm | Transphorm, Inc. | Product Releases | Comments

Transphorm Inc. (Goleta, CA) announced 600V GaN (Gallium Nitride)-based, low-profile PQFN products and the expansion of its product portfolio in the industry-standard TO220 packages. The 600-V GaN HEMTs (high electron mobility transistors) use the

LISTED UNDER: High Voltage | Power

AEC-Q101-qualified MOSFETs enable lower on-resistance per die area

March 4, 2014 12:59 pm | Vishay Intertechnology | Product Releases | Comments

Vishay Intertechnology (Malvern, PA) released the first AEC-Q101-qualified TrenchFET power MOSFETs to feature ThunderFET technology. To increase efficiency and save space in automotive applications, the Vishay Siliconix 100 V n-channel SQJ402EP, SQJ488EP...

LISTED UNDER: FET | Power

Power management ICs designed for RF agile radio applications and FPGAs

March 4, 2014 9:58 am | Analog Devices, Inc. | Product Releases | Comments

Analog Devices (Norwood, MA) introduced an integrated family of efficient power management ICs (integrated circuits) targeting compact, high density power solutions for RF agile radio and FPGA/processor-based (field-programmable gate array) applications. Features include multiple buck regulators....

LISTED UNDER: Power

Off-line PWM controllers features integrated power MOSFET

January 14, 2014 3:41 pm | Allegro Microsystems, Inc. | Product Releases | Comments

Allegro MicroSystems, LLC introduces a new family of off-line PWM controllers that incorporate both a sense MOSFET and a current mode PWM controller IC. This new series is offered by Allegro and manufactured and developed by Sanken Electric Co., Ltd. in Japan.

LISTED UNDER: Power

Audio controller IC offers improved efficiency

January 13, 2014 9:57 am | International Rectifier | Product Releases | Comments

The PowIRaudio family of devices integrates PWM controller and digital audio power MOSFETs in a single package to offer a highly efficient, compact solution that reduces component count, shrinks PCB size up to 70 percent and simplifies Class D amplifier design.

LISTED UNDER: Power

IC is ideal for larger systems implementing IO-Link

December 11, 2013 12:28 pm | Linear Technology Corporation | Product Releases | Comments

Linear Technology Corporation introduces the LTC2874, an IO-Link master IC, combining a power and communications interface to four remote IO-Link devices (slaves).  A rugged interface and rich feature set make the LTC2874 ideal for larger systems implementing IO-Link (IEC61131-9) in harsh, industrial environments.

LISTED UNDER: Power

GaN amplifier offers exceptional thermal resistance

December 6, 2013 3:55 pm | Nitronex | Product Releases | Comments

Nitronex announced the release of the NPA1006, a new broadband GaN amplifier. This 28-V, 20-MHz to 1-GHz, 15-W amplifier with 14 dB gain and 60 percent drain efficiency is housed in an industry-standard 6-mm x 5-mm DFN plastic package. The thermal resistance is

LISTED UNDER: Microwave | Power

MOSFET is first in 2.4 mm by 2.0 mm by 0.4 mm MICRO FOOT package size

December 6, 2013 12:37 pm | Vishay Intertechnology | Product Releases | Comments

Vishay Intertechnology extended its offering of TrenchFET p-channel Gen III power MOSFETs with the industry's first -20 V device in the 2.4 mm by 2.0 mm by 0.4 mm CSP MICRO FOOT package size. Designed to increase efficiency and save space in mobile computing devices, the Vishay Siliconix Si8851EDB offers extremely low on-resistance....

LISTED UNDER: Power

Power-management IC provides a regulated high-voltage output up to 500V

December 4, 2013 9:10 am | Supertex, Inc. | Product Releases | Comments

Supertex expanded its product offerings in support of MEMS and other high voltage solutions with the introduction of the HV9150. The HV9150 is a power management IC, a hysteretic controller that is intended to simply and easily provide a non-isolated, regulated high voltage output (6V to 500V) from a battery level input (2.7V to 4.5V).

LISTED UNDER: Power

GaN high electron mobility transistors target 2.9- to 3.5-GHz S-Band radar amplifier systems

November 22, 2013 11:30 am | Product Releases | Comments

Cree has introduced two new gallium nitride (GaN) high electron mobility transistors (HEMTs) for use in 2.9-GHz to 3.5-GHz S-Band radar amplifier systems, including: weather, air traffic control, marine, port surveillance, and search and rescue radar applications. Based on

LISTED UNDER: High Frequency (RF) | Microwave | Power

IC family features 95% power conversion efficiency

November 5, 2013 2:05 pm | Product Releases | Comments

To meet the growing worldwide demand for power hungry smart phones and tablet computers, Active-Semi today announced a new family of Power Bank IC solutions, the ACT2800 product family. The first two devices in this evolutionary product series are the ACT2801 and ACT2802.

LISTED UNDER: Power

MOSFET boasts an Rds(on) of only 19 mΩ in a TO 247 package

November 4, 2013 9:13 am | Mouser Electronics | Product Releases | Comments

Mouser Electronics announced the availability of the CoolMOS C7 MOSFET from Infineon Technologies, with 650V Superjunction MOSFET technology and one of the lowest Rds(on) specs in the industry. A MOSFET behaves like a voltage controlled switch or resistor. The lower the on‑state resistance (Rds(on)), the more current flows through the switch and therefore the higher the efficiency of the circuit.

LISTED UNDER: Power

Power modules optimized for high efficiency appliance and light industrial applications

October 29, 2013 1:45 pm | International Rectifier | Product Releases | Comments

International Rectifier announced the expansion of its family of highly integrated, ultra-compact, patent pending µIPM power modules with the introduction of the IRSM808-105MH and IRSM807-105MH, optimized for high efficiency appliance and light industrial applications with motor power up to 300W.

LISTED UNDER: Power

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