Advertisement
Power

High-voltage MOSFETs built on Gen II Super Junction Technology

February 2, 2015 3:29 pm | by Vishay Intertechnology | Vishay Intertechnology | Product Releases | Comments

Vishay Intertechnology, Inc. announced the addition of 11 new devices to its 500 V series of high-voltage MOSFETs optimized for operation in switch mode power supplies (SMPS) to 500 W. Featuring the same benefits of extremely ...

LISTED UNDER: Power

N-channel power MOSFETs achieve industry’s lowest resistance

January 21, 2015 9:38 am | by Texas Instruments | Texas Instruments | Product Releases | Comments

Texas Instruments (Dallas, TX) introduced 11 new N-channel power MOSFETs to its NexFET product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with the industry’s lowest on-resistance (Rdson) in ...

LISTED UNDER: Power

GaN power transistor half bridge enables 12-V to 1.2-V PoL system efficiency at 25 A

September 24, 2014 1:56 pm | Product Releases | Comments

EPC (El Segundo, CA) announced the EPC2100, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are ...

LISTED UNDER: ICs | Transistors | FET
Advertisement

15-W GaN on SiC pulsed power transistor delivers 63 percent drain efficiency

August 26, 2014 9:36 am | Product Releases | Comments

M/A-COM Technology Solutions Inc. (Lowell, MA) announced a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications. The MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized GaN on Silicon Carbide RF power transistors optimized for ...

LISTED UNDER: Transistors | Power

SiC 1200-V MOSFET boasts RDS(ON) of 25-mOhms in TO-247-3 package

May 15, 2014 9:45 am | Product Releases | Comments

Cree (Durham, NC) introduced a silicon carbide (SiC) 1200-V MOSFET with an RDS(ON) of 25 mΩ in an industry standard TO-247-3 package. The C2M0025120D, is expected to be widely adopted in PV inverters, high voltage DC/DC converters, induction…

LISTED UNDER: FET | Power

Wide-band, unmatched transistor enables efficiencies up to 77%

April 24, 2014 4:40 pm | Rfmw Ltd | Product Releases | Comments

RFMW, Ltd. announces design and sales support for the T2G6001528-SG from TriQuint. This wide band, unmatched transistor offers up to 15W P3dB of power from DC to 6GHz. GaN on SiC HEMT enables efficiencies up to 77%. Other features include....

LISTED UNDER: Power

Current-sensing IC boosts overall system efficiency

March 21, 2014 11:51 am | International Rectifier | Product Releases | Comments

International Rectifier (El Segundo, CA) announced the introduction of the robust IR25750 general-purpose current-sensing IC available in an ultra-compact SOT23-5L package that boosts overall system efficiency while delivering dramatic space savings....

LISTED UNDER: Power

Load switch offers low on-resistance and 4-A maximum continuous current

March 20, 2014 12:00 pm | Advanced Power Electronics Corp. USA | Product Releases | Comments

Advanced Power Electronics Corp. (San Jose, CA) launched a small load switch with controlled turn on and very low on-resistance. The APE8937-HF-3 load switch contains one N-channel MOSFET that can

LISTED UNDER: Power Management | Power
Advertisement

JEDEC-qualified 600-V GaN-on-Silicon family includes PQFN-packaging, smaller die sizes

March 17, 2014 6:06 pm | Transphorm, Inc. | Product Releases | Comments

Transphorm Inc. (Goleta, CA) announced 600V GaN (Gallium Nitride)-based, low-profile PQFN products and the expansion of its product portfolio in the industry-standard TO220 packages. The 600-V GaN HEMTs (high electron mobility transistors) use the

LISTED UNDER: High Voltage | Power

AEC-Q101-qualified MOSFETs enable lower on-resistance per die area

March 4, 2014 12:59 pm | Vishay Intertechnology | Product Releases | Comments

Vishay Intertechnology (Malvern, PA) released the first AEC-Q101-qualified TrenchFET power MOSFETs to feature ThunderFET technology. To increase efficiency and save space in automotive applications, the Vishay Siliconix 100 V n-channel SQJ402EP, SQJ488EP...

LISTED UNDER: FET | Power

Power management ICs designed for RF agile radio applications and FPGAs

March 4, 2014 9:58 am | Analog Devices, Inc. | Product Releases | Comments

Analog Devices (Norwood, MA) introduced an integrated family of efficient power management ICs (integrated circuits) targeting compact, high density power solutions for RF agile radio and FPGA/processor-based (field-programmable gate array) applications. Features include multiple buck regulators....

LISTED UNDER: Power

Off-line PWM controllers features integrated power MOSFET

January 14, 2014 3:41 pm | Allegro Microsystems, Inc. | Product Releases | Comments

Allegro MicroSystems, LLC introduces a new family of off-line PWM controllers that incorporate both a sense MOSFET and a current mode PWM controller IC. This new series is offered by Allegro and manufactured and developed by Sanken Electric Co., Ltd. in Japan.

LISTED UNDER: Power

Audio controller IC offers improved efficiency

January 13, 2014 9:57 am | International Rectifier | Product Releases | Comments

The PowIRaudio family of devices integrates PWM controller and digital audio power MOSFETs in a single package to offer a highly efficient, compact solution that reduces component count, shrinks PCB size up to 70 percent and simplifies Class D amplifier design.

LISTED UNDER: Power

IC is ideal for larger systems implementing IO-Link

December 11, 2013 12:28 pm | Linear Technology Corporation | Product Releases | Comments

Linear Technology Corporation introduces the LTC2874, an IO-Link master IC, combining a power and communications interface to four remote IO-Link devices (slaves).  A rugged interface and rich feature set make the LTC2874 ideal for larger systems implementing IO-Link (IEC61131-9) in harsh, industrial environments.

LISTED UNDER: Power

GaN amplifier offers exceptional thermal resistance

December 6, 2013 3:55 pm | Nitronex | Product Releases | Comments

Nitronex announced the release of the NPA1006, a new broadband GaN amplifier. This 28-V, 20-MHz to 1-GHz, 15-W amplifier with 14 dB gain and 60 percent drain efficiency is housed in an industry-standard 6-mm x 5-mm DFN plastic package. The thermal resistance is

LISTED UNDER: Microwave | Power

Pages

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading