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Microwave

DC to 20 GHz GaAs distributed driver amp offers positive gain slope, low noise figure

March 21, 2014 10:23 am | Product Releases | Comments

Custom MMIC (Westford, MA) added a new driver amplifier, the CMD192C5, to its product library. The CMD192C5 is the packaged version of the CMD192 amplifier that until now had only been available in die form. This wideband GaAs MMIC distributed amplifier

LISTED UNDER: Microwave
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LNA for cellular infrastructure features low noise figure and high linearity

December 20, 2013 12:52 pm | Skyworks Solutions, Inc. | Product Releases | Comments

Skyworks Solutions, Inc. has introduced a 0.7- GHz to 1.2 GHz single-die cascode, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifier (LNA) for cellular infrastructure applications such as tower-mounted amplifiers, remote radio units, repeaters, and base

LISTED UNDER: High Frequency (RF) | Microwave

GaN amplifier offers exceptional thermal resistance

December 6, 2013 3:55 pm | Nitronex | Product Releases | Comments

Nitronex announced the release of the NPA1006, a new broadband GaN amplifier. This 28-V, 20-MHz to 1-GHz, 15-W amplifier with 14 dB gain and 60 percent drain efficiency is housed in an industry-standard 6-mm x 5-mm DFN plastic package. The thermal resistance is

LISTED UNDER: Microwave | Power

GaN high electron mobility transistors target 2.9- to 3.5-GHz S-Band radar amplifier systems

November 22, 2013 11:30 am | Product Releases | Comments

Cree has introduced two new gallium nitride (GaN) high electron mobility transistors (HEMTs) for use in 2.9-GHz to 3.5-GHz S-Band radar amplifier systems, including: weather, air traffic control, marine, port surveillance, and search and rescue radar applications. Based on

LISTED UNDER: High Frequency (RF) | Microwave | Power

Antenna tuning switch targets LTE-A smartphones

August 28, 2013 12:43 pm | Peregrine Semiconductor Corp | Product Releases | Comments

Peregrine Semiconductor Corporation announced a single-pole, single throw (SPST) antenna tuning switch for LTE-Advanced (LTE-A) smartphones. This device uses the company’s UltraCMOS process with its HaRP and DuNE enhancements to deliver a desirable combination of

LISTED UNDER: Microwave

GaN HEMTs target L-Band radar systems

August 22, 2013 11:07 am | Product Releases | Comments

Cree has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) for use in 1.2 GHz to 1.4GHz L-Band radar amplifier systems: the 250-W CGHV14250 and the 500-W CGHV14500. Featuring what is asserted to be the highest known L-Band efficiency performance at 85°C

LISTED UNDER: High Frequency (RF) | Microwave

SPDT switch-limiter touts high power handling and fast recovery time

August 22, 2013 10:20 am | Product Releases | Comments

M/A-COM Technology Solutions announced a new SPDT switch-limiter that is suited for S-Band military and commercial radar systems. The MASL-011023 operates over the 2.7 GHz to 3.5 GHz bandwidth and handles 125W of CW power at 85°C while providing a fast recovery time of

LISTED UNDER: Switches/Multiplexers | High Frequency (RF) | Microwave

Transistor series is presented as highest power for radar and communications systems

May 16, 2013 10:08 am | Product Releases | Comments

  M/A-COM Technology Solutions introduced a series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. The family scales to peak pulse power levels of 100 W, which is asserted to be the

LISTED UNDER: Microwave
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