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IGBTs

6.5kV press-pack IGBT includes DC collector current rating of 258A

April 8, 2014 4:27 pm | Ixys | Product Releases | Comments

IXYS UK, IXYS Corporation’s (Chippenham, England), high power subsidiary, announced the launch of a new 6.5kV press-pack IGBT. The new 6.5kV device is asymmetrical blocking with a fully rated anti-parallel diode included within the package. DC collector current rating is 258A....

LISTED UNDER: IGBTs
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High-speed hard-switching 650-V IGBTs promise improved switching performance and efficiency

January 7, 2014 9:25 am | Ixys | Product Releases | Comments

IXYS Corporation is expanding its 650V XPTIGBT product portfolio. With current ratings ranging from 16 A to 200 A, these new devices are designed to achieve an optimal balance between the turn-off energy loss and on-state voltage, especially

LISTED UNDER: IGBTs

Insulated-gate bipolar transistors feature low saturation voltage and low tail current

December 30, 2013 12:16 pm | Richardson RFPD, Inc. | Product Releases | Comments

Richardson RFPD announces availability and full design support capabilities for three new 650V non-punch-through (NPT) insulated-gate bipolar transistors (IGBTs) from Microsemi Corporation (Microsemi). The new devices are the latest addition to Microsemi's family of 45A to 95A IGBTs.

LISTED UNDER: IGBTs

IGBTs provide faster switching performance with improved reliability

December 6, 2013 12:23 pm | Fairchild Semiconductor | Product Releases | Comments

Fairchild Semiconductor introduces a series of 1200 V field stop trench IGBTs. Targeting hard-switching industrial applications such as solar inverters, uninterruptible power supplies (UPS), and welders, this new IGBT series will help power engineers achieve better efficiency and reliability in their designs.

LISTED UNDER: IGBTs

IGBT module features total Current - Voltage capability of 600 Ampere and 650 Volt

October 29, 2013 9:27 am | Ixys | Product Releases | Comments

IXYS Corporation announced today a new high-power phase-leg in the SimBus-F outline with a total Current - Voltage capability of 600 Ampere and 650 Volt. The excellent best-in-class performance of the discrete 650 Volt XPT Trench IGBT products is now also available in module outlines, up to 600 Amperes with the IXYS fast “Sonic” diodes.

LISTED UNDER: IGBTs

IGBTs deliver higher power density and increased efficiency for motor drive and UPS applications

June 11, 2013 12:19 pm | International Rectifier | Product Releases | Comments

International Rectifier introduced a family of rugged 1200V ultra-fast insulated-gate bipolar transistors (IGBTs) optimized for industrial motor drive and UPS systems. The new devices leverage IR’s field stop trench ultra-thin wafer technology that delivers lower conduction and switching losses.

LISTED UNDER: IGBTs

Insulated-gate bipolar transistors optimized for uninterruptible power supplies, solar, induction heating, industrial motor, and welding applications

February 11, 2013 3:00 pm | International Rectifier | Product Releases | Comments

International Rectifier (IR) announced the expansion of its family of 600V insulated-gate bipolar transistors (IGBTs) with the introduction of the IRGP4640D, IRGP4650D and IRGP4660D. The new rugged, reliable devices are optimized for uninterruptible power supplies (UPS), solar, induction heating, industrial motor and welding applications.

LISTED UNDER: IGBTs

Gate bipolar transistor technology platform reduces power dissipation

December 11, 2012 2:58 pm | Product Releases | Comments

International Rectifier, IR  introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation 8 (Gen8) 1200V IGBT platform utilizes IR’s latest generation trench gate field stop technology to offer best-in-class performance for industrial and energy saving applications.

LISTED UNDER: IGBTs
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