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High Frequency (RF)

ISO/IEC15693-compliant IC provides a universal identity card

March 4, 2014 1:32 pm | Product Releases | Comments

EM Microelectronic (Marin, Switzerland) announced the EM4237, the first high-secure ISO/IEC15693 compliant device offering unequalled RF performances and enabling efficient and secure solutions for anti-counterfeiting and brand protection.

LISTED UNDER: High Frequency (RF)
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LNA for cellular infrastructure features low noise figure and high linearity

December 20, 2013 12:52 pm | Skyworks Solutions, Inc. | Product Releases | Comments

Skyworks Solutions, Inc. has introduced a 0.7- GHz to 1.2 GHz single-die cascode, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifier (LNA) for cellular infrastructure applications such as tower-mounted amplifiers, remote radio units, repeaters, and base

LISTED UNDER: High Frequency (RF) | Microwave

GaN high electron mobility transistors target 2.9- to 3.5-GHz S-Band radar amplifier systems

November 22, 2013 11:30 am | Product Releases | Comments

Cree has introduced two new gallium nitride (GaN) high electron mobility transistors (HEMTs) for use in 2.9-GHz to 3.5-GHz S-Band radar amplifier systems, including: weather, air traffic control, marine, port surveillance, and search and rescue radar applications. Based on

LISTED UNDER: High Frequency (RF) | Microwave | Power

GaN transistors offer superior gain, thermal management, and efficiency

October 3, 2013 1:06 pm | Triquint Semiconductor | Product Releases | Comments

TriQuint Semiconductor announced the release of new gallium nitride (GaN) transistors that offer superior gain, thermal management and efficiency for commercial and defense RF amplifier designs. TriQuint is announcing two new high-power GaN packaged transistors including the 200 Watt T1G4020036-FS/FL....

LISTED UNDER: High Frequency (RF)

GaN transistors are capable of amplification into the multiple-GHz range

September 26, 2013 10:19 am | Efficient Power Conversion | Product Releases | Comments

Efficient Power Conversion Corporation extended its family of high-speed, high performance transistors with the EPC8000 family of products. These third generation devices have switching transition speeds in the sub nano-second range, making them capable of hard switching applications above 10 MHz. These products exhibit

LISTED UNDER: High Frequency (RF) | Power

GaN HEMTs target L-Band radar systems

August 22, 2013 11:07 am | Product Releases | Comments

Cree has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) for use in 1.2 GHz to 1.4GHz L-Band radar amplifier systems: the 250-W CGHV14250 and the 500-W CGHV14500. Featuring what is asserted to be the highest known L-Band efficiency performance at 85°C

LISTED UNDER: High Frequency (RF) | Microwave

SPDT switch-limiter touts high power handling and fast recovery time

August 22, 2013 10:20 am | Product Releases | Comments

M/A-COM Technology Solutions announced a new SPDT switch-limiter that is suited for S-Band military and commercial radar systems. The MASL-011023 operates over the 2.7 GHz to 3.5 GHz bandwidth and handles 125W of CW power at 85°C while providing a fast recovery time of

LISTED UNDER: Switches/Multiplexers | High Frequency (RF) | Microwave
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