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FET

GaN power transistor half bridge enables 12-V to 1.2-V PoL system efficiency at 25 A

September 24, 2014 1:56 pm | Product Releases | Comments

EPC (El Segundo, CA) announced the EPC2100, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are ...

LISTED UNDER: ICs | Transistors | FET

SiC 1200-V MOSFET boasts RDS(ON) of 25-mOhms in TO-247-3 package

May 15, 2014 9:45 am | Product Releases | Comments

Cree (Durham, NC) introduced a silicon carbide (SiC) 1200-V MOSFET with an RDS(ON) of 25 mΩ in an industry standard TO-247-3 package. The C2M0025120D, is expected to be widely adopted in PV inverters, high voltage DC/DC converters, induction…

LISTED UNDER: FET | Power

40-V to 100-V MOSFETs suit high-current motor control and power designs

March 24, 2014 12:06 pm | Texas Instruments | Product Releases | Comments

Texas Instruments (Dallas, TX) introduced 14 power MOSFETs in TO-220 and SON packages that support input voltages from 40 V to 100 V. The high-efficiency NexFETs include 40-V, 60-V, 80-V and 100-V N-channel devices that provide

LISTED UNDER: FET
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AEC-Q101-qualified MOSFETs enable lower on-resistance per die area

March 4, 2014 12:59 pm | Vishay Intertechnology | Product Releases | Comments

Vishay Intertechnology (Malvern, PA) released the first AEC-Q101-qualified TrenchFET power MOSFETs to feature ThunderFET technology. To increase efficiency and save space in automotive applications, the Vishay Siliconix 100 V n-channel SQJ402EP, SQJ488EP...

LISTED UNDER: FET | Power

Power MOSFETs offer fast switching performance

February 20, 2014 4:39 pm | Advanced Power Electronics Corp. USA | Product Releases | Comments

Advanced Power Electronics Corp. (San Jose, CA) has recently launched new N-channel enhancement-mode power MOSFETs offering a fast switching performance and very low on-resistance. The AP99T03GS-HF-3 MOSFET comes in a TO-263 package.

LISTED UNDER: FET

100 V gallium nitride FET targets high frequency applications with positive gain into the 3 GHz range

February 20, 2014 10:24 am | Efficient Power Conversion | Product Releases | Comments

Efficient Power Conversion Corporation (El Segundo, CA) extended its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is 1.75 mm2 with 100 VDS.  Applications include hard-switching power converters operating in the multi-megahertz range....

LISTED UNDER: FET

Mid-voltage MOSFETs optimize power utilization in a space-saving package

February 10, 2014 2:32 pm | Fairchild Semiconductor | Product Releases | Comments

Many end applications — such as IP phones, motor control circuits, active clamp switches, and load switches — need to offer higher energy efficiency in a smaller footprint in order to meet manufacturers’ demands. Fairchild Semiconductor (San Jose, CA) developed the FDMC86xxxP series of P-channel PowerTrench MOSFETs....

LISTED UNDER: FET

SiC MOSFET offers high-speed switching with low capacitances and high blocking voltage

November 5, 2013 10:11 am | Richardson RFPD, Inc. | Product Releases | Comments

Richardson RFPD, Inc. announces the availability of the industry's first 1Ω, 1700V Silicon Carbide (SiC) metal oxide semiconductor (MOSFET) from Cree, Inc. (Cree). The C2M1000170D Z-FET offers high-speed switching with low capacitances and high blocking voltage with low RDS(on). It is easy to parallel, simple to drive and resistant to latch-up.

LISTED UNDER: FET
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FETs designed to meet the requirements of X to Ku band low noise block downconverters for direct broadcast satellites

October 18, 2013 2:28 pm | Renesas | Product Releases | Comments

Renesas Electronics and California Eastern Laboratories (CEL) introduce the NE3516S02 and NE3513M04 GaAs FETs which were specifically designed to meet the demanding requirements of X to Ku band low noise block (LNB) downconverters for direct broadcast satellites.

LISTED UNDER: FET

Enhanced gallium nitride FET Family adds 100-V, 16 milli-Ohm power transistor

September 12, 2013 5:38 pm | Efficient Power Conversion | Product Releases | Comments

Efficient Power Conversion Corporation introduced its EPC2016 enhancement mode gallium nitride power transistors. This a 3.36-mm2, 100-VDS, 11-A device includes a maximum RDS(on) of 16 mΩ with 5 V applied to the gate. This GaN power transistor presents high performance due to its ultra high switching frequency

LISTED UNDER: FET | Power

Automotive MOSFETs in TO-247 feature 650-V rating

August 7, 2013 4:06 pm | Stmicroelectronics | Product Releases | Comments

The STW78N65M5 and STW62N65M5 from STMicroelectronics are said to be the industry’s first 650V AEC-Q101 automotive-qualified MOSFETs in the popular TO-247 package. The 650V rating provides exceptional safety margin when exposed to high-voltage spikes, enhancing the

LISTED UNDER: FET

Device integrates MOSFET and diode in one package

June 4, 2013 11:33 am | Fairchild Semiconductor | Product Releases | Comments

Fairchild Semiconductor introduced a family of 100 V BoostPak devices that combines a MOSFET and diode in one package to replace discrete solutions currently used in LED TV/monitor backlight, LED lighting and DC/DC converter applications. By integrating the MOSFET and diode into a single package,

LISTED UNDER: FET | Power | Power

Power transistors present desirable on-state resistance for low-energy, space-efficient designs

May 22, 2013 11:35 am | Stmicroelectronics | Product Releases | Comments

STMicroelectronics has introduced a generation of energy-efficient power devices that are positioned as reducing the environmental impact of equipment such as telecom or computing systems, solar inverters, industrial automation and automotive applications. STripFET VII DeepGATE MOSFETs are asserted to

LISTED UNDER: FET | Power

Super-Junction MOSFETs add dedicated control input for increased switching efficiency

May 6, 2013 10:58 am | Stmicroelectronics | Product Releases | Comments

STMicroelectronics introduced the first MDmesh V Super-Junction MOSFET featuring a new package technology that increases the efficiency of power circuitry in equipment such as white goods, televisions, PCs, telecom, and server switched-mode power supplies. The new TO247-4 4-lead package

LISTED UNDER: FET

Development board features dedicated eGaN driver

March 15, 2013 9:42 am | Efficient Power Conversion | Product Releases | Comments

Efficient Power Conversion Corporation (EPC) introduced the EPC9010 development board to help engineers start designing with a 100-V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC/DC power supplies, point-of-load converters, class D audio

LISTED UNDER: Development | FET

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