FET
Super-Junction MOSFETs add dedicated control input for increased switching efficiency
May 6, 2013 10:58 am | Stmicroelectronics | Product Releases | CommentsSTMicroelectronics introduced the first MDmesh V Super-Junction MOSFET featuring a new package technology that increases the efficiency of power circuitry in equipment such as white goods, televisions, PCs, telecom, and server switched-mode power supplies. The new TO247-4 4-lead package
LISTED UNDER: FET
Development board features dedicated eGaN driver
March 15, 2013 9:42 am | Efficient Power Conversion | Product Releases | CommentsEfficient Power Conversion Corporation (EPC) introduced the EPC9010 development board to help engineers start designing with a 100-V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC/DC power supplies, point-of-load converters, class D audio
LISTED UNDER: Development | FET
SiC MOSFET promises high efficiency, smaller size for power conversion systems
March 13, 2013 12:22 pm | Product Releases | CommentsCree, Inc. announced the release of its second generation SiC MOSFET, positioned as enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These 1200-V MOSFETs deliver desirable power density and switching efficiency at
LISTED UNDER: FET