FET
Power transistors present desirable on-state resistance for low-energy, space-efficient designs
May 22, 2013 11:35 am | Stmicroelectronics | Product Releases | CommentsSTMicroelectronics has introduced a generation of energy-efficient power devices that are positioned as reducing the environmental impact of equipment such as telecom or computing systems, solar inverters, industrial automation and automotive applications. STripFET VII DeepGATE MOSFETs are asserted to
LISTED UNDER: FET | Power
Super-Junction MOSFETs add dedicated control input for increased switching efficiency
May 6, 2013 10:58 am | Stmicroelectronics | Product Releases | CommentsSTMicroelectronics introduced the first MDmesh V Super-Junction MOSFET featuring a new package technology that increases the efficiency of power circuitry in equipment such as white goods, televisions, PCs, telecom, and server switched-mode power supplies. The new TO247-4 4-lead package
LISTED UNDER: FET
Development board features dedicated eGaN driver
March 15, 2013 9:42 am | Efficient Power Conversion | Product Releases | CommentsEfficient Power Conversion Corporation (EPC) introduced the EPC9010 development board to help engineers start designing with a 100-V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC/DC power supplies, point-of-load converters, class D audio
LISTED UNDER: Development | FET
SiC MOSFET promises high efficiency, smaller size for power conversion systems
March 13, 2013 12:22 pm | Product Releases | CommentsCree, Inc. announced the release of its second generation SiC MOSFET, positioned as enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These 1200-V MOSFETs deliver desirable power density and switching efficiency at
LISTED UNDER: FET