Electronic Component News

FET

Power transistors present desirable on-state resistance for low-energy, space-efficient designs

May 22, 2013 11:35 am | Stmicroelectronics | Product Releases | Comments

STMicroelectronics has introduced a generation of energy-efficient power devices that are positioned as reducing the environmental impact of equipment such as telecom or computing systems, solar inverters, industrial automation and automotive applications. STripFET VII DeepGATE MOSFETs are asserted to

LISTED UNDER: FET | Power
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Super-Junction MOSFETs add dedicated control input for increased switching efficiency

May 6, 2013 10:58 am | Stmicroelectronics | Product Releases | Comments

STMicroelectronics introduced the first MDmesh V Super-Junction MOSFET featuring a new package technology that increases the efficiency of power circuitry in equipment such as white goods, televisions, PCs, telecom, and server switched-mode power supplies. The new TO247-4 4-lead package

LISTED UNDER: FET

Development board features dedicated eGaN driver

March 15, 2013 9:42 am | Efficient Power Conversion | Product Releases | Comments

Efficient Power Conversion Corporation (EPC) introduced the EPC9010 development board to help engineers start designing with a 100-V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC/DC power supplies, point-of-load converters, class D audio

LISTED UNDER: Development | FET

SiC MOSFET promises high efficiency, smaller size for power conversion systems

March 13, 2013 12:22 pm | Product Releases | Comments

Cree, Inc. announced the release of its second generation SiC MOSFET, positioned as enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These 1200-V MOSFETs deliver desirable power density and switching efficiency at

LISTED UNDER: FET
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