Active Star Transceiver Incorporates Embedded Bit-Reshaper

December 18, 2008 6:42 am | Product Releases | Comments

Reducing the asymmetric delay caused by components in FlexRay networks or introduced by external interferences onto the network, austriamicrosystems’ AS8224 FlexRay Active Star transceiver integrates an embedded bit-reshaper for use in in-vehicle networks. The device is capable of reshaping single bits in 12.5 ns steps (microtick) up to a total amount of 37.5 ns (3 microticks). The mechanism performs a clock-deviation


Switches Support Multicast Functionality

December 18, 2008 6:36 am | Product Releases | Comments

Utilizing IDT switch and interface technology, two PCI Express (PCIe) Gen2 switching solutions from IDT support multicast functionality. Compliant with the PCI-SIG PCIe base specification 2.0, the switches double the throughput bandwidth of existing PCIe lanes to 5 gigabits per second of data transfer


Power MOSFETs Exhibit High Package Current Rating

December 17, 2008 6:52 am | International Rectifier | Product Releases | Comments

Offering TO-220, D2PAK, and D2PAK-7 packaging options, International Rectifier’s new range of trench HEXFET power MOSFETs provide a package current rating of up to 195 A (TO-220 and D2PAK) and 240 A (D2PAK-7). The N-channel components demonstrate on-state resistances from 2.5 mOhm to 22 mOhm, voltages from 60 V to 200 V, and Qg from 73 nC to 200 nC. The RoHS-compliant devices qualify to


Power MOSFETs Offer Low On-Resistance

December 16, 2008 5:04 am | Product Releases | Comments

Based on TurboFET technology, Vishay Intertechnology’s 20-V SiS426DN and SiR496DP and 30-V Si7718DN and Si7784DP N-channel power MOSFETs exhibit “on-resistance times gate charge” of 76.6 mOhm-nC at 4.5 V and 117.6 mOhm-nC at 10 V (20-V) and 112.34 mOhm-nC at 4.5 V and 180 mOhm-nC at 10 V (30-V). The 20-V units offer on-resistance of 5.8 mOhm at 4.5 V and 4.2 mOhm at 10 V and


Linear Power Amplifier Delivers 49-dBm OIP3

December 15, 2008 9:04 am | Product Releases | Comments

Exhibiting small signal gain of 14.5 dB, Mimix Broadband’s XP1050-QJ GaAs MMIC linear power amplifier offers 49-dBm OIP3 in a frequency range from 7.1 GHz to 8.5 GHz. The 6-mm × 6-mm QFN-packaged component includes an integrated temperature-compensated on-chip power detector, on-chip ESD protection structures, and DC bypass capacitors. The RoHS-compliant device operates in point-to-point


Buck Controllers Provide Input Voltage Range to 75 V

December 15, 2008 8:20 am | Product Releases | Comments

With input voltage range up to 75 V, four high-voltage, non-synchronous buck controllers from National Semiconductor feature 85 percent peak efficiency when powering low voltage loads from a high voltage supply. The controllers can regulate output voltages as low as 1.2 V at load currents in excess of 5 A


Programmable Clock Generators Offer Three Independent PLLs

December 12, 2008 11:59 am | Product Releases | Comments

Exhibiting frequency stabilities from ±25 ppm to ±50 ppm, SiTime’s SiT9103 and SiT9104 MEMS-based programmable clock generators present 3 independent PLLs that can offer 3 unrelated clock frequencies. The SiT9103 provides 3 differential clock outputs that can operate at up to 800 MHz in servers, routers, RAID controllers,


Microcontrollers Support USB

December 12, 2008 4:36 am | Product Releases | Comments

Adding to the JM family, Freescale Semiconductor’s MC9S08JM16 8-bit microcontrollers integrates on-chip USB 2.0 full-speed device support. The components offer a 48-MHz S08 core, a bus frequency of 24 MHz, up to 16-KB Flash memory, 1-KB SRAM, 256-B USB RAM, and an operating voltage range from 2.7 V to


Mixed-Signal Microcontroller Consumes Low Power

December 11, 2008 9:58 am | Product Releases | Comments

Using a power-saving stop mode, Maxim Integrated Products’ MAXQ2010 16-bit mixed-signal microcontroller reduces power consumption to 370 nA and 6.5 mA max. at 85°C in battery-powered devices. The 100-pin, LQFP-packaged component performs at up to 10 MIPS at 10 MHz with a typical active-mode current of 3.1 mA at


Real-Time Clock Modules Exhibit Small Dimensions

December 10, 2008 7:35 am | Product Releases | Comments

Using a QMEMS crystal chip, Epson Toyocom’s RX-4571BD and RX-8571BD real-time clock modules come in a 3.400-mm × 1.700-mm × 1t-mm 10-pin SON package. The RX-4571BD supports a 3-wire serial interface and consumes a standby current of 0.320 µA at 3 V, while the I²C-Bus-compliant RX-8571BD has 128-bit user RAM and


Dual TLM Transistors Exhibit Low VCE(SAT)

December 9, 2008 11:32 am | Product Releases | Comments

Functioning in a TLM832D package, Central Semiconductor’s CTLM3410-M832D (NPN), CTLM7410-M832D (PNP), and CTLM3474-M832D (complementary NPN/PNP) dual TLM transistors have a typical VCE(SAT) of 20 mV (NPN) and


12-bit ADCs Address Space-Constrained Applications

December 9, 2008 6:50 am | Analog Devices, Inc. | Product Releases | Comments

Requiring only eight pins and traces compared to as many as 26 in similar dual-channel devices, a pair of four-channel 12-bit analog-to-digital converters (ADCs) Analog Devices use up to 50 percent less printed-circuit-board surface area than other ADCs in their class. Requiring a single 1.8-Vin, the 250-MSPS (mega-sample-per-second) AD9239 incorporates a packetized output scheme, while the 210-MSPS AD9639 supports a JESD204-compliant output.


Audio Amplifier Exhibits Low PSRR

December 9, 2008 5:55 am | On Semiconductor | Product Releases | Comments

Performing in portable and wireless applications, ON Semiconductor's NCP2991 Class AB audio amplifier offers a power supply rejection ratio (PSRR) of -103 dB. The 1.450-mm × 1.450-mm × 0.600-mm µBump-packaged component demonstrates selectable start-up time between 15 ms and 20 ms, current consumption of 20 nA, total harmonic


Discovery Opens Potential for Spintronic Logic

December 9, 2008 5:27 am | Product Releases | Comments

Researchers working at the National Institute of Standards and Technology (NIST) have demonstrated for the first time the existence of a key magnetic—as opposed to electronic—property of specially built semiconductor devices. This discovery raises hopes for even smaller and faster gadgets that could result from magnetic data storage in a semiconductor material, which could then quickly process the data through built-in logic circuits controlled by electric fields.


Synthesizer ICs Demonstrate Low Phase Noise

December 8, 2008 11:03 am | Product Releases | Comments

Operating from -40°C to 85°C, Hittite Microwave’s HMC700LP4E fractional-N and HMC698LP5E and HMC699LP5E integer-N synthesizer ICs exhibit a phase noise of -108 dBc/Hz with FOM in the order of -227 dBc and -153 dBc/Hz at 10-kHz offset from a 100-MHz, 0-dBm signal, respectively. The 8-GHz HMC7000LP4E has a 16-bit fractional divider, 24-bit delta-sigma modulator, 14-bit reference path divide, charge pump, and



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