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Audio controller IC offers improved efficiency

January 13, 2014 9:57 am | International Rectifier | Product Releases | Comments

The PowIRaudio family of devices integrates PWM controller and digital audio power MOSFETs in a single package to offer a highly efficient, compact solution that reduces component count, shrinks PCB size up to 70 percent and simplifies Class D amplifier design.

LISTED UNDER: Power
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650-V green mode buck switches offer high power efficiency with system design scalability

January 8, 2014 12:02 pm | Fairchild Semiconductor | Product Releases | Comments

Fairchild Semiconductor’s FSL306 and FSL336 650 V Green Mode AC Buck Switches offer burst-mode operation with the low available operating current (250 µA) that helps to reduce standby mode power consumption for increased energy efficiency. Power scalability from

LISTED UNDER: Power Management | Voltage Regulators

High-speed hard-switching 650-V IGBTs promise improved switching performance and efficiency

January 7, 2014 9:25 am | Ixys | Product Releases | Comments

IXYS Corporation is expanding its 650V XPTIGBT product portfolio. With current ratings ranging from 16 A to 200 A, these new devices are designed to achieve an optimal balance between the turn-off energy loss and on-state voltage, especially

LISTED UNDER: IGBTs

Low-power sensor hub helps ease sensor fusion implementation

January 6, 2014 2:41 pm | Microchip Technology Inc. | Product Releases | Comments

Microchip Technology Inc. announced the SSC7102—a low-power, flexible and turnkey sensor hub that makes implementing sensor fusion easy and provides a large selection of supported sensors. The company directly partnered with multiple industry-leading sensor manufacturers and

LISTED UNDER: Sensor

Insulated-gate bipolar transistors feature low saturation voltage and low tail current

December 30, 2013 12:16 pm | Richardson RFPD, Inc. | Product Releases | Comments

Richardson RFPD announces availability and full design support capabilities for three new 650V non-punch-through (NPT) insulated-gate bipolar transistors (IGBTs) from Microsemi Corporation (Microsemi). The new devices are the latest addition to Microsemi's family of 45A to 95A IGBTs.

LISTED UNDER: IGBTs

LDO offers extensive monitoring, protection & cable drop compensation

December 23, 2013 3:02 pm | Linear Technology Corporation | Product Releases | Comments

Linear Technology Corporation announces the LT3086, the latest addition to the LDO+ family, offering significant functionality previously unavailable in linear regulators. The 40V, 2.1A low dropout linear regulator (LDO) includes current monitoring with externally settable current limit and temperature monitoring....

LISTED UNDER: Power Supply Circuits

LNA for cellular infrastructure features low noise figure and high linearity

December 20, 2013 12:52 pm | Skyworks Solutions, Inc. | Product Releases | Comments

Skyworks Solutions, Inc. has introduced a 0.7- GHz to 1.2 GHz single-die cascode, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifier (LNA) for cellular infrastructure applications such as tower-mounted amplifiers, remote radio units, repeaters, and base

LISTED UNDER: High Frequency (RF) | Microwave

Gate driver development boards enable high-speed power circuit creation

December 17, 2013 12:59 pm | Ixys | Product Releases | Comments

IXYS Corporation announced today the introduction of the DVRFD630 and DVRFD631 RF MOSFET Gate Driver Development Boards by its IXYS Colorado division. These general-purpose circuit boards are designed to demonstrate the performance of the IXRFD630 and IXRFD631 RF MOSFET gate drivers....

LISTED UNDER: Line Drivers/Receivers

Translator series includes frequency range >800MHz

December 16, 2013 9:44 am | Cts Electronic Components Products | Product Releases | Comments

CTS Electronic Components announces a dual CMOS/TTL to Differential PECL Translator, CTS100ELT22, to their current frequency control products offering. CTS’ line of integrated circuits includes buffers & dividers, capacitive tuning, cable driver and PECL/ECL logic that are complementary to their current Frequency Control portfolio.

LISTED UNDER: High Frequency

Surge rectifiers offer a 20% lower profile

December 12, 2013 2:41 pm | Product Releases | Comments

Surge Components has announced a new line of low-profile bridge rectifiers that provide design engineers several advantages in terms of power management and height including a 30% lower profile than other brides in a similar class. Product highlights include....

LISTED UNDER: Bridge

IC is ideal for larger systems implementing IO-Link

December 11, 2013 12:28 pm | Linear Technology Corporation | Product Releases | Comments

Linear Technology Corporation introduces the LTC2874, an IO-Link master IC, combining a power and communications interface to four remote IO-Link devices (slaves).  A rugged interface and rich feature set make the LTC2874 ideal for larger systems implementing IO-Link (IEC61131-9) in harsh, industrial environments.

LISTED UNDER: Power

Wireless microcontrollers optimized for cost-sensitive and performance-intensive designs

December 11, 2013 12:22 pm | Silicon Laboratories Inc. | Product Releases | Comments

Silicon Labs announced that it has expanded its family of 8-bit Si10xx wireless microcontrollers (MCUs) with two new options optimized for both cost-sensitive and performance-intensive designs. By combining its ultra-low-power MCU technology with its sub-GHz EZRadio and EZRadioPRO transceivers in a single-chip solution, Silicon Labs has created new energy-friendly wireless MCUs....

LISTED UNDER: Development Boards

GaN amplifier offers exceptional thermal resistance

December 6, 2013 3:55 pm | Nitronex | Product Releases | Comments

Nitronex announced the release of the NPA1006, a new broadband GaN amplifier. This 28-V, 20-MHz to 1-GHz, 15-W amplifier with 14 dB gain and 60 percent drain efficiency is housed in an industry-standard 6-mm x 5-mm DFN plastic package. The thermal resistance is

LISTED UNDER: Microwave | Power

MOSFET is first in 2.4 mm by 2.0 mm by 0.4 mm MICRO FOOT package size

December 6, 2013 12:37 pm | Vishay Intertechnology | Product Releases | Comments

Vishay Intertechnology extended its offering of TrenchFET p-channel Gen III power MOSFETs with the industry's first -20 V device in the 2.4 mm by 2.0 mm by 0.4 mm CSP MICRO FOOT package size. Designed to increase efficiency and save space in mobile computing devices, the Vishay Siliconix Si8851EDB offers extremely low on-resistance....

LISTED UNDER: Power

IGBTs provide faster switching performance with improved reliability

December 6, 2013 12:23 pm | Fairchild Semiconductor | Product Releases | Comments

Fairchild Semiconductor introduces a series of 1200 V field stop trench IGBTs. Targeting hard-switching industrial applications such as solar inverters, uninterruptible power supplies (UPS), and welders, this new IGBT series will help power engineers achieve better efficiency and reliability in their designs.

LISTED UNDER: IGBTs

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