Precision laser diode driver features separate pulse and bias current adjustment

September 24, 2013 4:39 pm | Ixys | Product Releases | Comments

IXYS Corporation announced the introduction of the PCX-7401 precision laser diode driver and current source by its IXYS Colorado division. This instrument provides precision pulsed current with accurate microprocessor-based digital power control.


Noise-cancelling speaker driver ICs produce zero audible hiss

September 17, 2013 2:20 pm | Product Releases | Comments

ams AG has introduced the AS3435 and AS3415 ANC speaker drivers, paving the way for a new generation of noise cancellation stereo headsets with zero audible hiss. The AS3435 and AS3415 are also the industry’s first ANC (active noise cancellation) ICs to feature integrated bypass switches....

LISTED UNDER: Line Drivers/Receivers

Power transistor delivers industry’s highest reliability rating and lowest pulse droop

September 17, 2013 9:22 am | M/A-Com Technology Solutions, Inc. | Product Releases | Comments

M/A-COM Technology Solutions announced a new ceramic GaN on SiC HEMT Power Transistor for avionics applications. The MAGX-001090-600L00 is a gold-metalized, matched GaN on Silicon Carbide, RF power transistor optimized for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems.


Enhanced gallium nitride FET Family adds 100-V, 16 milli-Ohm power transistor

September 12, 2013 5:38 pm | Efficient Power Conversion | Product Releases | Comments

Efficient Power Conversion Corporation introduced its EPC2016 enhancement mode gallium nitride power transistors. This a 3.36-mm2, 100-VDS, 11-A device includes a maximum RDS(on) of 16 mΩ with 5 V applied to the gate. This GaN power transistor presents high performance due to its ultra high switching frequency


Controller chip touts long battery life, high performance, and low price

September 12, 2013 10:02 am | Product Releases | Comments

GreenPeak Technologies introduced the latest addition to its ZigBee chip portfolio - the new GP490, a low cost, ultra-low power ZigBee PRO communication controller that allows the design and manufacture of cost and energy optimized sensor devices for the rapidly growing Smart Home application market.


Power transistor offers a broad instantaneous bandwidth

September 10, 2013 2:28 pm | Rfmw Ltd | Product Releases | Comments

RFMW, Ltd. announces design and sales support for the T1G6001032-SM, a ceramic packaged, 10W peak (P3dB) power transistor fabricated using TriQuint Semiconductor’s proven Gallium Nitride (GaN) production process.  Offering a broad instantaneous bandwidth afforded from TriQuint’s TQGaN25 process technology...


Power MOSFETs designed for use in automotive systems

September 10, 2013 9:27 am | Mouser Electronics | Product Releases | Comments

Mouser Electronics, Inc. now stocks International Rectifier’s (IR) family of AEC-Q101 Automotive qualified 40V N-channel MOSFETs, featuring IR’s proven Gen12.7 trench technology with ultra-low Rds(on). International Rectifier's Automotive COOLiRFET Power MOSFETs from Mouser Electronics target rugged automotive applications.


Family of microcontrollers serves the industrial, medical, and consumer markets

September 10, 2013 9:12 am | Zilog | Product Releases | Comments

Zilog launched its new S3 Family of Z8-compatible microcontrollers (MCUs), thereby expanding its portfolio of microcontroller products serving the industrial, medical, and consumer markets. The S3 Family of 4-/8-bit products includes MCUs for remote control devices, ultra-low power MCUs, and a series of products for home appliances, consumer electronics, and LCD displays.

LISTED UNDER: Development Boards

120W GaN transistors offer > 50% drain efficiency from a 36V supply

September 5, 2013 1:51 pm | Rfmw Ltd | Product Releases | Comments

RFMW, Ltd. announces design and sales support for TriQuint Semiconductor wideband GaN on SiC transistors. The TriQuint T1G4012036-FL is a 120 W peak (24 W avg.) (P3dB) discrete transistor in a flange package while the TriQuint T1G4012036-FS provides an earless configuration.

LISTED UNDER: High Voltage

IC features low dropout voltage of only 300mV at full load

September 5, 2013 12:22 pm | Linear Technology Corporation | Product Releases | Comments

Linear Technology Corporation announces a new H grade, wider temperature range version of the LT1965, a 1A LDO with high power density. The IC features low dropout voltage of only 300mV at full load, wide VIN capability of 1.8V to 20V and an adjustable output from 1.2V to 19.5V.

LISTED UNDER: Power Supply Circuits

Antenna tuning switch targets LTE-A smartphones

August 28, 2013 12:43 pm | Peregrine Semiconductor Corp | Product Releases | Comments

Peregrine Semiconductor Corporation announced a single-pole, single throw (SPST) antenna tuning switch for LTE-Advanced (LTE-A) smartphones. This device uses the company’s UltraCMOS process with its HaRP and DuNE enhancements to deliver a desirable combination of


System-on-chip series is optimized for battery-powered applications

August 28, 2013 12:28 pm | Cypress | Product Releases | Comments

Cypress Semiconductor announced a new device series in its PSoC 1programmable system-on-chip family. The new CY8C24x93 device series, the lowest-power and lowest-cost devices in the PSoC 1 family, is optimized for battery-powered applications, leveraging a 1.1 µA Standby mode and 100 nA Deep-Sleep mode to extend battery life.


Motor control IC simplifies 12V automotive actuator designs

August 27, 2013 4:10 pm | Melexis | Product Releases | Comments

Melexis Technologies NV has announced the release of its latest advanced motor controller IC for use with the direct current (DC) and single or dual phase brush-less direct current (BLDC) motors now being designed into modern vehicles. Intended for environments with elevated temperature levels...


IC integrates a 600V half-bridge control circuit

August 22, 2013 1:53 pm | International Rectifier | Product Releases | Comments

International Rectifier introduced a reliable, highly efficient and cost effective control IC for magnetic ballasts used in fluorescent lamps. The IRS2538DS emulates the behavior of a magnetic ballast control system, leveraging IR’s patented ballast and high-voltage technologies to offer an easy-to-use, one-chip magnetic replacement ballast solution.


GaN HEMTs target L-Band radar systems

August 22, 2013 11:07 am | Product Releases | Comments

Cree has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) for use in 1.2 GHz to 1.4GHz L-Band radar amplifier systems: the 250-W CGHV14250 and the 500-W CGHV14500. Featuring what is asserted to be the highest known L-Band efficiency performance at 85°C

LISTED UNDER: High Frequency (RF) | Microwave


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