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Transistors

IGBTs optimized for fast switching applications

October 16, 2014 4:46 pm | International Rectifier | Product Releases | Comments

International Rectifier (El Segundo, CA) announced the expansion of its portfolio of insulated-gate bipolar transistors (IGBTs) with the introduction of a family of rugged, reliable 650V devices optimized for fast switching applications including solar inverters....

LISTED UNDER: ICs | Transistors | IGBTs

GaN HEMT die specified for operation up to 6GHz

September 30, 2014 2:41 pm | Product Releases | Comments

Cree, Inc. (Durham, NC) has developed a family of 50V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6GHz. The new 40W CGHV60040D and 170W CGHV60170D represent the only 50V bare GaN HEMT die available....

LISTED UNDER: ICs | Transistors

GaN power transistor half bridge enables 12-V to 1.2-V PoL system efficiency at 25 A

September 24, 2014 1:56 pm | Product Releases | Comments

EPC (El Segundo, CA) announced the EPC2100, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are ...

LISTED UNDER: ICs | Transistors | FET
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15-W GaN on SiC pulsed power transistor delivers 63 percent drain efficiency

August 26, 2014 9:36 am | Product Releases | Comments

M/A-COM Technology Solutions Inc. (Lowell, MA) announced a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications. The MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized GaN on Silicon Carbide RF power transistors optimized for ...

LISTED UNDER: Transistors | Power

600V ultra-fast trench IGBTs optimized for welding applications

August 15, 2014 1:39 pm | International Rectifier | Product Releases | Comments

International Rectifier (El Segundo, CA) announced the introduction of the IR66xx series of high-performance 600V ultra-fast Trench-gate Field Stop insulated-gate bipolar transistors (IGBTs). The new rugged, reliable family of devices features extremely low conduction....

LISTED UNDER: Transistors | IGBTs

45W GaN on SiC transistors offer 17dB of gain

July 22, 2014 1:18 pm | Rfmw Ltd | Product Releases | Comments

RFMW, Ltd. (San Jose, CA) announces design and sales support for two new 45W GaN on SiC transistors from TriQuint. The T1G4004532-FL (flanged) and T1G4004532-FS (earless) are wideband, DC to 3.5GHz devices offering 17dB of gain, nearly twice that of competing GaN devices....

LISTED UNDER: Transistors

1200-V IGBTs promise long life, energy savings

June 12, 2014 10:37 am | Stmicroelectronics | Product Releases | Comments

STMicroelectronics’ (Geneva) latest 1200-V IGBTs use second-generation trench-gate field-stop high-speed technology to boost energy efficiency and ruggedness in applications such as solar inverters, welders, uninterruptible power supplies, and…

LISTED UNDER: IGBTs

IGBT and rectifier diode modules combine high operating efficiency with wide choice of package designs

May 21, 2014 4:28 pm | Littelfuse, Inc. | Product Releases | Comments

Littelfuse (Chicago, IL) has added two products to its power control semiconductor line. The new Half-Bridge Circuit IGBT Modules, available in industry-standard S, D, or WD packages with ratings up to 1200V and 600A, offer the high efficiency and fast switching speeds of modern IGBT technology....

LISTED UNDER: IGBTs
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SiC 1200-V MOSFET boasts RDS(ON) of 25-mOhms in TO-247-3 package

May 15, 2014 9:45 am | Product Releases | Comments

Cree (Durham, NC) introduced a silicon carbide (SiC) 1200-V MOSFET with an RDS(ON) of 25 mΩ in an industry standard TO-247-3 package. The C2M0025120D, is expected to be widely adopted in PV inverters, high voltage DC/DC converters, induction…

LISTED UNDER: FET | Power

600-V energy-efficient Trench IGBTs are optimized for a complete power range spectrum

May 12, 2014 11:31 am | International Rectifier | Product Releases | Comments

International Rectifier (El Segundo, CA) expanded its portfolio of 600-V insulated-gate bipolar transistors (IGBTs) in a variety of packages. The new rugged, reliable IRxx46xx Series of devices are optimized for a complete power range spectrum.

LISTED UNDER: IGBTs

IGBTs feature current ratings range from 20A to 310A

May 2, 2014 4:17 pm | Ixys | Product Releases | Comments

IXYS Corporation (Milpitas, CA), a manufacturer of power semiconductors and integrated circuits for energy efficiency, power management, and motor control applications, is going to announce a new IGBT product line, the 900V XPT IGBTs. The current ratings range from 20A to 310A....

LISTED UNDER: IGBTs

Wide-band, unmatched transistor enables efficiencies up to 77%

April 24, 2014 4:40 pm | Rfmw Ltd | Product Releases | Comments

RFMW, Ltd. announces design and sales support for the T2G6001528-SG from TriQuint. This wide band, unmatched transistor offers up to 15W P3dB of power from DC to 6GHz. GaN on SiC HEMT enables efficiencies up to 77%. Other features include....

LISTED UNDER: Power

6.5kV press-pack IGBT includes DC collector current rating of 258A

April 8, 2014 4:27 pm | Ixys | Product Releases | Comments

IXYS UK, IXYS Corporation’s (Chippenham, England), high power subsidiary, announced the launch of a new 6.5kV press-pack IGBT. The new 6.5kV device is asymmetrical blocking with a fully rated anti-parallel diode included within the package. DC collector current rating is 258A....

LISTED UNDER: IGBTs

Electrostatic actuator IC intended for pico-projector, 3D-scanning, and HUD systems

March 24, 2014 1:32 pm | Product Releases | Comments

Teledyne DALSA’s Semiconductor Foundry (BROMONT, Quebec, Canada), a division of Teledyne Technologies, announced today the availability of its DH0357AQ Electrostatic Actuator High Voltage IC. Using proprietary High Voltage CMOS/DMOS technology, the DH0357AQ’s high accuracy...

LISTED UNDER: High Voltage

40-V to 100-V MOSFETs suit high-current motor control and power designs

March 24, 2014 12:06 pm | Texas Instruments | Product Releases | Comments

Texas Instruments (Dallas, TX) introduced 14 power MOSFETs in TO-220 and SON packages that support input voltages from 40 V to 100 V. The high-efficiency NexFETs include 40-V, 60-V, 80-V and 100-V N-channel devices that provide

LISTED UNDER: FET

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