Transistors
Transistor series is presented as highest power for radar and communications systems
May 16, 2013 10:08 am | Product Releases | CommentsM/A-COM Technology Solutions introduced a series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. The family scales to peak pulse power levels of 100 W, which is asserted to be the
LISTED UNDER: Microwave
MOSFETs deliver benchmark on-state resistance for improved system efficiency in heavy load applications
May 15, 2013 12:31 pm | International Rectifier | Product Releases | CommentsInternational Rectifier introduced a family of automotive-qualified COOLiRFET MOSFETs delivering benchmark on-state resistance (Rds(on)) for heavy load applications including electric power steering (EPS), braking systems and other heavy loads on internal combustion engine (ICE) and micro hybrid vehicle platforms.
LISTED UNDER: Power
Super-Junction MOSFETs add dedicated control input for increased switching efficiency
May 6, 2013 10:58 am | Stmicroelectronics | Product Releases | CommentsSTMicroelectronics introduced the first MDmesh V Super-Junction MOSFET featuring a new package technology that increases the efficiency of power circuitry in equipment such as white goods, televisions, PCs, telecom, and server switched-mode power supplies. The new TO247-4 4-lead package
LISTED UNDER: FET
MOSFETs provide a 5% improvement in thermal dissipation compared to conventional solutions
March 27, 2013 4:51 pm | Mouser Electronics | Product Releases | CommentsMouser Electronics, Inc. is now stocking Power CSP MOSFETs from Panasonic that provide a 5% improvement in thermal dissipation and a dramatically reduced size compared to conventional solutions. Panasonic Electronic Components FJ3P02100L and FK3P02110L power MOSFET transistors provide improved thermal performance....
LISTED UNDER: Power
Development board features dedicated eGaN driver
March 15, 2013 9:42 am | Efficient Power Conversion | Product Releases | CommentsEfficient Power Conversion Corporation (EPC) introduced the EPC9010 development board to help engineers start designing with a 100-V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC/DC power supplies, point-of-load converters, class D audio
LISTED UNDER: Development | FET
Six-hundred-Volt GaN-on-silicon power devices are JEDEC-qualified
March 14, 2013 11:39 am | Transphorm, Inc. | Product Releases | CommentsTransphorm Inc. announced the Total GaN family of GaN (Gallium Nitride) on silicon transistors and diodes, establishing what is believed to be the world’s first JEDEC-qualified 600 V GaN device platform, according to the company. Based on Transphorm’s EZ-GaN technology, the TPH3006PS GaN high
LISTED UNDER: High Voltage | Power
SiC MOSFET promises high efficiency, smaller size for power conversion systems
March 13, 2013 12:22 pm | Product Releases | CommentsCree, Inc. announced the release of its second generation SiC MOSFET, positioned as enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These 1200-V MOSFETs deliver desirable power density and switching efficiency at
LISTED UNDER: FET
MOSFET family ideal for high-voltage applications
February 15, 2013 3:30 pm | Alpha And Omega Semiconductor | Product Releases | CommentsAlpha and Omega Semiconductor Limited introduced the AOTF11C60 and AOTF20C60, 600V MOSFETs with AlphaMOS II technology. The AlphaMOS II (a patent pending proprietary structure and process) combines planar-like robustness and controlled switching characteristics with the low on-resistance performance of super-junction type devices.
LISTED UNDER: Power
Insulated-gate bipolar transistors optimized for uninterruptible power supplies, solar, induction heating, industrial motor, and welding applications
February 11, 2013 3:00 pm | International Rectifier | Product Releases | CommentsInternational Rectifier (IR) announced the expansion of its family of 600V insulated-gate bipolar transistors (IGBTs) with the introduction of the IRGP4640D, IRGP4650D and IRGP4660D. The new rugged, reliable devices are optimized for uninterruptible power supplies (UPS), solar, induction heating, industrial motor and welding applications.
LISTED UNDER: IGBTs
IC simplifies design and reduces overall system cost
January 24, 2013 2:15 pm | International Rectifier | Product Releases | CommentsInternational Rectifier expanded its family of SmartRectifier ICs with the introduction of the IR1169 high speed synchronous rectifier (SR) controller for flyback, forward and half-bridge converters used in AC-DC adapter, PC, server and Telecom SMPS applications.
LISTED UNDER: High Voltage
Gate bipolar transistor technology platform reduces power dissipation
December 11, 2012 2:58 pm | Product Releases | CommentsInternational Rectifier, IR introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation 8 (Gen8) 1200V IGBT platform utilizes IR’s latest generation trench gate field stop technology to offer best-in-class performance for industrial and energy saving applications.
LISTED UNDER: IGBTs