Transistors
Boost regulator offers constant efficiency performance over a 100:1 span in output current
June 11, 2013 12:51 pm | Product Releases | CommentsTouchstone Semiconductor announced the TS3300 boost regulator. The TS3300 uses only 3.5µA of supply current, and the TS3300’s efficiency performance is constant over a 100:1 span in output current. No other low power boost converter offers this level of performance.
LISTED UNDER: Power
IGBTs deliver higher power density and increased efficiency for motor drive and UPS applications
June 11, 2013 12:19 pm | International Rectifier | Product Releases | CommentsInternational Rectifier introduced a family of rugged 1200V ultra-fast insulated-gate bipolar transistors (IGBTs) optimized for industrial motor drive and UPS systems. The new devices leverage IR’s field stop trench ultra-thin wafer technology that delivers lower conduction and switching losses.
LISTED UNDER: IGBTs
Device integrates MOSFET and diode in one package
June 4, 2013 11:33 am | Fairchild Semiconductor | Product Releases | CommentsFairchild Semiconductor introduced a family of 100 V BoostPak devices that combines a MOSFET and diode in one package to replace discrete solutions currently used in LED TV/monitor backlight, LED lighting and DC/DC converter applications. By integrating the MOSFET and diode into a single package,
LISTED UNDER: FET | Power | PowerPFC IC designed for compact consumer products and PCs
May 31, 2013 2:16 pm | Power Integrations | Product Releases | CommentsPower Integrations introduced HiperPFS-2, a new family of high-efficiency, active-PFC ICs for offline applications from 100 W to 380 W. HiperPFS-2ICs combine a boost PFC controller, driver, PFC power MOSFET, PFC diode and protection circuits in one package, enabling exceptionally compact designs ideal for small-form-factor power supplies....
LISTED UNDER: PowerIC helps reduce thermal stress on processors in phones and tablets
May 29, 2013 9:39 am | Product Releases | Commentsams introduced the AS3721, a power management IC (PMIC) with an innovative remote-feedback circuit that helps reduce the thermal stress of applications processors in smartphones and tablets. When paired with new AS3729 point-of-load regulators from ams, the highly-integrated AS3721 provides a complete power management system....
LISTED UNDER: Power
Integrated power modules include high voltage ratings
May 28, 2013 9:33 am | International Rectifier | Product Releases | CommentsInternational Rectifier announced the expansion of its PowIRaudio family with the introduction of the single channel IR4321M and dual channel IR4322M integrated power modules. The 60V IR4321M and IR4322M complement the existing product offering and expand the power capability of low load-impedance Class D audio systems....
LISTED UNDER: PowerPower MOSFET series offers on-resistance down to 30 mΩ
May 22, 2013 3:53 pm | Vishay Intertechnology | Product Releases | CommentsVishay Intertechnology added additional 650 V power MOSFETs to its E Series family of devices. These 22 new devices in eight different packages offer an extended on-resistance range from 30 mΩ to 600 mΩ at 10 V and broaden the series' maximum current ratings from 6 A to 105 A.
LISTED UNDER: Power
Power transistors present desirable on-state resistance for low-energy, space-efficient designs
May 22, 2013 11:35 am | Stmicroelectronics | Product Releases | CommentsSTMicroelectronics has introduced a generation of energy-efficient power devices that are positioned as reducing the environmental impact of equipment such as telecom or computing systems, solar inverters, industrial automation and automotive applications. STripFET VII DeepGATE MOSFETs are asserted to
LISTED UNDER: FET | Power
Transistor series is presented as highest power for radar and communications systems
May 16, 2013 10:08 am | Product Releases | CommentsM/A-COM Technology Solutions introduced a series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. The family scales to peak pulse power levels of 100 W, which is asserted to be the
LISTED UNDER: Microwave
MOSFETs deliver benchmark on-state resistance for improved system efficiency in heavy load applications
May 15, 2013 12:31 pm | International Rectifier | Product Releases | CommentsInternational Rectifier introduced a family of automotive-qualified COOLiRFET MOSFETs delivering benchmark on-state resistance (Rds(on)) for heavy load applications including electric power steering (EPS), braking systems and other heavy loads on internal combustion engine (ICE) and micro hybrid vehicle platforms.
LISTED UNDER: Power
Super-Junction MOSFETs add dedicated control input for increased switching efficiency
May 6, 2013 10:58 am | Stmicroelectronics | Product Releases | CommentsSTMicroelectronics introduced the first MDmesh V Super-Junction MOSFET featuring a new package technology that increases the efficiency of power circuitry in equipment such as white goods, televisions, PCs, telecom, and server switched-mode power supplies. The new TO247-4 4-lead package
LISTED UNDER: FET
MOSFETs provide a 5% improvement in thermal dissipation compared to conventional solutions
March 27, 2013 4:51 pm | Mouser Electronics | Product Releases | CommentsMouser Electronics, Inc. is now stocking Power CSP MOSFETs from Panasonic that provide a 5% improvement in thermal dissipation and a dramatically reduced size compared to conventional solutions. Panasonic Electronic Components FJ3P02100L and FK3P02110L power MOSFET transistors provide improved thermal performance....
LISTED UNDER: Power
Development board features dedicated eGaN driver
March 15, 2013 9:42 am | Efficient Power Conversion | Product Releases | CommentsEfficient Power Conversion Corporation (EPC) introduced the EPC9010 development board to help engineers start designing with a 100-V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC/DC power supplies, point-of-load converters, class D audio
LISTED UNDER: Development | FET
Six-hundred-Volt GaN-on-silicon power devices are JEDEC-qualified
March 14, 2013 11:39 am | Transphorm, Inc. | Product Releases | CommentsTransphorm Inc. announced the Total GaN family of GaN (Gallium Nitride) on silicon transistors and diodes, establishing what is believed to be the world’s first JEDEC-qualified 600 V GaN device platform, according to the company. Based on Transphorm’s EZ-GaN technology, the TPH3006PS GaN high
LISTED UNDER: High Voltage | Power
SiC MOSFET promises high efficiency, smaller size for power conversion systems
March 13, 2013 12:22 pm | Product Releases | CommentsCree, Inc. announced the release of its second generation SiC MOSFET, positioned as enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These 1200-V MOSFETs deliver desirable power density and switching efficiency at
LISTED UNDER: FET