Power transistors present desirable on-state resistance for low-energy, space-efficient designs
STMicroelectronics has introduced a generation of energy-efficient power devices that are positioned as reducing the environmental impact of equipment such as telecom or computing systems, solar inverters, industrial automation and automotive applications. STripFET VII DeepGATE MOSFETs are asserted to deliver the best conducting efficiency among currently available 80-V and 100-V devices, while switching efficiency is also increased. In addition, the devices help to simplify designs and reduce equipment size and cost by allowing system power and efficiency targets to be met using fewer devices in small package sizes. An enhanced MOSFET gate structure lowers device on-state resistance while also reducing internal capacitances and gate charge for faster, more efficient switching. The devices also have high avalanche ruggedness to survive potentially damaging hard conditions, which makes them appropriate for automotive applications.
STMicroelectronics, www.st.com