pHEMT FET provides 22 dBm of output power at P1dB
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TGF2018 , a discrete 180-Micron pHEMT which operates from DC to 20 GHz. The TGF2018 is designed using TriQuint's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression. This performance makes the TGF2018 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Samples of the TGF2018 are available from RFMW.