RFMW introduces 35W GaN transistor from TriQuint Semiconductor

RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s T1G4003532-FL [1], DC – 3.5GHz GaN transistor offering up to 37W P3dB. Gain at P3dB is >13dB requiring half the power from a driver stage compared to some competitors. Linear gain is >16dB. The T1G4003532-FL uses a 32V supply and only 150mA of current. Overall efficiency is >53%. The –FL flange package offers low thermal resistance and is easily bolted down. Also available is an earless package in the T1G4003532-FS [2]. Both transistors are ideal for military and civilian radar, jammers and communications systems where high gain and high efficiency are required. The T1G4003532-FL is available from stock at RFMW, Ltd.

T1G4003532-FL [1]: Flanged Package, 35W, 32V, DC-3.5GHz GaN RF Power Transistor

T1G4003532-FS [2]: Earless Package, 35W, 32V, DC-3.5GHz GaN RF Power Transistor