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MagnaChip to Offer Vertical Bipolar Junction Transistor Type ESD Device

Tue, 01/10/2012 - 10:23am
PowerPulse.net

MagnaChip Semiconductor Corp. announced that it now offers a vertical BJT (Bipolar Junction Transistor) type ESD (Electro-Static Discharge) clamp to shrink products in 0.35um advanced BCD (Bipolar/CMOS/DMOS) technology with DTI (Deep Trench Isolation).

The vertical BJT ESD clamp, which is compatible with MagnaChip’s deep trench isolation process, was developed to support the industry’s first advanced BCD technology that enables DTI. The vertical BJT clamp features a snapback operating by BJT action and reduces the ESD clamp area by up to 84% when compared with conventional diode types.

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