microGaN GmbH and Diotec Semiconductor AG are cooperating in design and marketing of Gallium Nitride (GaN) rectifier devices. One of the recent developments is a 4A, 600V so called "SiGaN Schottky" diode, with an ultra-low barrier of 0.3V. Like any Schottky diode, it has got negligible reverse recovery and only a very low switching time, caused by junction capacity.
The "stored charge" is comparable to that of Silicon Carbide (SiC) devices, while the forward voltage drop is much lower: at 4A and 25°C it is typically 1.2V, at 100°C typically 1.6V. Such devices are well suited for high frequent switching circuits, such as Power Factor Correction (PFC) and inverter circuits. They boost PFC efficiency especially in partial load condition. Power losses in drive and solar inverters can be significantly reduced, just by bypassing the body diodes of Si-Superjunction MOSFETs by such high speed free-wheeling diodes.