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Dow Corning To Produce 100mm Silicon Carbide Epitaxy

Mon, 09/27/2010 - 12:20pm
PowerPulse.net

Dow Corning announced that it will begin production of 100mm silicon carbide (SiC) epitaxy, providing a single source for SiC substrates used in power electronics device manufacturing. The new product expands Dow Corning’s product line beyond its existing offerings of 76mm SiC wafers and epitaxy and 100 mm SiC wafers.

Dow Corning supplies SiC and silicone materials that can be used in high power applications such as high-tech communications, solar and wind energy systems, large scale electrical distribution grids, vehicles, and academic research.

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