SAN JOSE, Calif., December 7, 2009—Renesas Technology America, Inc., today announced the R2J20653ANP, an Integrated Driver-MOSFET for use in voltage regulators (VR) for the CPU, memory, etc., of notebook PCs. It complies with the integrated Driver-MOSFET (DrMOS) specification and combines a high-voltage tolerance supporting input voltages up to 27 V and the industry’s top power supply efficiency of 91% (when operating with an input voltage of 20 V and an output voltage of 1.1 V). Mass production will begin on December 7, 2009.
Integrated Driver-MOSFET (DrMOS) is a standard for packaged semiconductor devices proposed by Intel Corporation.*1 A DrMOS integrates in a single package the two types of power MOSFET required by the power supply of a CPU, etc., and a (single) driver IC to drive them. The R2J20653ANP is a highly integrated device conforming to the standard. It can be used, for example, to convert a 20 V input voltage to a 1.1 V CPU power supply voltage. The features of the R2J20653ANP are described below.
|(1)||DrMOS-compliant with high-voltage
tolerance capable of accommodating notebook PC adapter voltage of
Renesas Technology has long offered a lineup of DrMOS-compliant products specifically for servers and desktop PCs with an input voltage of 12 V. The new R2J20653ANP extends this to the 20 V adapter voltage used by notebook PCs, making it the first high-voltage-tolerant product of this type from Renesas Technology. Its introduction will contribute to CPU power supplies for notebook PCs that are more compact and offer better performance, and it is expected to lead to wider adoption of the DrMOS standard.
|(2)||The industry’s top power supply
efficiency at an input voltage of 20 V
High efficiency is achieved through integration in a single package, as well as the use of carefully matched power MOSFETs with industry-top-level performance and a high-performance driver IC. Under conditions of an input voltage of 20 V and output voltage of 1.1 V (frequency: 300 kHz), for example, the voltage conversion efficiency is 91%, the top performance level in the industry. This contributes to power supplies with reduced power consumption and larger current capacity.
|(3)||Compact (6 mm × 6 mm) and
high-heat-dissipation package for more compact CPU power
The R2J20653ANP integrates in a single 40-pin QFN package measuring only 6.0 × 6.0 × 0.95 (mm) the two types of power MOSFET required by the power supply of a CPU, etc., and a (single) driver IC to drive them. This reduces the mounting area to about 70% that of a conventional configuration using three packages (Renesas Technology product comparison). In addition, the high-heat-dissipation package is suitable for high-speed switching, so the size and number of external passive components, such as inductors or capacitors, can be reduced.
The package is pin compatible with Renesas Technology’s R2J20651ANP DrMOS-compliant product for servers, etc., which supports an input voltage of 12 V. This reduces the development time required to use the R2J20653ANP with existing systems.
|(4)||Two-stage overheating protection
To prevent a notebook PC from overheating or even igniting, the thermal design of the product is extremely important. For example, an independent overheating protection function can be provided at the product design stage. The R2J20653ANP is the industry’s first DrMOS-compliant product to incorporate in the driver IC a two-stage overheating protection function, comprising a thermal warning function and a thermal shutdown function. This makes the device safer and highly reliable.
< Product Background >
As data devices such as notebook PCs become more compact and lightweight, their internal components, such as the CPU and memory, are attaining ever higher levels of performance. At the same time, there is demand that the power supplies that feed the semiconductor components deliver reduced power consumption, better performance, and more compactness.
In response to these requirements in the field of power semiconductor components, which are key devices for power supplies, Renesas Technology has actively brought to market discrete, high-performance power MOSFETs and DrMOS-compliant products. In particular, Renesas Technology was one of the first in the industry to offer DrMOS-compliant products supporting the 12 V input voltage used by servers and desktop PCs, and a broad lineup of such products is now available. In the field of notebook PCs, there is growing demand for power supplies that are more compact and highly efficient. The R2J20653ANP, a DrMOS-compliant Integrated Driver-MOSFET with a high voltage tolerance supporting the 20 V adapter voltage used by notebook PCs, was developed with this in mind.
< Product Details >
The R2J20653ANP integrates in a single 40-pin QFN package two power MOSFETs (a high-side MOSFET and a low-side MOSFET) and a power IC. Integration in a single package means the parasitic inductance of interconnects between the devices is extremely small, which is ideal for high-frequency operation. The power MOSFETs used are Renesas Technology’s latest design, and they deliver the top performance in the industry. The low-side MOSFET incorporates a Schottky barrier diode to reduce switching loss. The driver IC is also optimized for on-off control of the MOSFETs used.
The lead-less, high-heat-dissipation package conforms to the DrMOS standard and has a compact mounting area. A wireless configuration with a copper plate is used for internal connections, substantially reducing resistance inside the package. Pins that occupy more than half the area of the back of the package are used for large current paths to prevent problems related to current and heat.
Finally, the industry’s highest level of efficiency and suitability for high-frequency operation makes it possible to reduce the size and number of external passive components, thereby decreasing the overall size of the power supply.
Renesas Technology plans to add new products with enhanced functionality and reduced loss to its lineup of DrMOS-compliant devices for notebook PCs in order to meet the evolving requirements of customers and expand sales of its products.
< Notes >
- Intel and the Intel logo are trademarks of Intel Corporation in the United States and other countries.
- High-side/low-side MOSFETs: The high-side and low-side MOSFETs are used as the non-isolated DC-DC converter switch, and the voltage is converted by alternately switching these devices on and off. The high-side MOSFET is used for DC-DC converter control, and the low-side MOSFET is used for synchronous rectification.
*Other product names, company names, or brands mentioned are the property of their respective owners.
< Typical Applications >
- CPU voltage regulators used in notebook PCs
- DC/DC converters for servers and desktop PCs
|Product Name||Package||One Reel|
|R2J20653ANP||40-pin QFN||$1.50/2,500 pieces|
< Specifications >
|Input voltage||4.5 V to 27 V|
|Output voltage||0.6 V to 5.0 V|
|Maximum rated current||35 A|
|Maximum operating frequency||2 MHz|
|Configuration||High-side MOSFET, low-side MOSFET, driver IC|
|Package||40-pin QFN (6 mm x 6 mm x 0.95 mm, 0.5 mm lead pitch)|
About Renesas Technology Corp.
Renesas Technology Corp. is the world's No.1 supplier of microcontrollers and one of the world's leading semiconductor system solutions providers for mobile, automotive and PC/AV (Audio Visual) markets. It is also a leading provider of Power MOSFETs, Smart Card microcontrollers, RF-ICs, High Power Amplifiers, Mixed Signal ICs, System-on-Chip (SoC), System-in-Package (SiP) and more. Established in 2003 as a joint venture between Hitachi, Ltd. (TSE:6501, NYSE:HIT) and Mitsubishi Electric Corporation (TSE:6503), Renesas Technology achieved consolidated revenue of 702.7 billion JPY in FY2008 (end of March 2009). Renesas Technology is based in Tokyo, Japan and has a global network of manufacturing, design and sales operations in 16 countries with 25,000 employees worldwide. For further information, please visit http://www.renesas.com
Figure 1: CPU voltage regulators for notebook PCs
Figure 2: Power Supply Efficiency Data
(Conditions: VIN = 20 V, Vout = 1.1 V, fsw = 300 kHz)