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Rohm to show SiC diodes featuring lower loss and higher voltage capability at PCIM

Fri, 03/30/2012 - 3:24am
ECN Europe

Rohm Semiconductor will be exhibiting, amongst other things, its SiC Schottky barrier diodes and MOSFETs with lower losses and higher voltage capability at PCIM in Nuremberg, Germany, May 8-10 (hall 12, booth 601).

The new SiC diodes and MOSFETs are suitable for a wide range of applications, including PFC (power factor correction) circuits, converters and inverters for power conversion. The MOSFETs are especially suited for power converters used in EV/HEV and industrial units. With the new SiC modules, switching loss can be reduced by up to 80% compared to IGBT modules, potentially allowing a water cooling system can be replaced by an air cooling system.

Rohm will also be showing its high voltage resistance PrestoMOS series, for power supplies featuring an integrated inverter. High-speed switching combined with an internal diode including high trr characteristics results in greater efficiency and lower loss while contributing to smaller designs. At PCIM, new package types such as the CPT3 (D-PAK) and LPT (D2-PAK) will be showcased at the booth.

Featuring Rohm’s unique IC technology, the company’s new Gate Drivers developed for SiC MOSFETs and IGBTs integrate a core-less transformer with 2,500Vrms isolation and can supply a gate voltage up to 24V. An original noise cancelling technology results in a high CMR and the driver can also support negative power supply. Additional features are a short propagation delay, a miller clamp output and a desaturation protection.

And finally at PCIM, Rohm will be featuring its new series of ML52x ICs for the control, monitoring and protection of Lithium-ion battery packs, compatible with up to 14 cells with one IC. They detect the over-charge, over-discharge and over-current of each cell and automatically control the external charge/discharge MOS-FET. They also provide a cell voltage monitoring pin for the external MCU and passive cell balancing.

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