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Bipolar Power Transistor Boosts Current Capability by 50 Percent

Wed, 05/25/2011 - 4:21pm
ECN Europe

STMicroelectronics has introduced the first member in a new family of high-performance bipolar power transistors. The new transistors offer an outstanding combination of high current capability, collector-emitter blocking voltage and ultra-low collector-emitter saturation voltage, making them ideal for use in LED drives, motor and relay drives and DC-DC converters.

The 3STR1630 is an NPN transistor manufactured using a new low-voltage planar technology. The planar technology incorporates a double-metal process that allows the cell density to be almost doubled without requiring the use of sophisticated photolithography equipment.

Picture: STMicroelectronics

In addition to increasing the current capability by about 50 percent for the same die size, the double-metal process enables transistors with Vceo ratings up to 100V, higher working switching frequencies (up to 300kHz), and a 40 percent reduction in Vce(sat).

The first member of the new family, the 3STR1630, has a minimum BVCEO of 30V, offering the best compromise between a 28V blocking voltage capability and minimum Vce(sat), with an equivalent on-resistance of only 100 milliOhms at hFE figure of 50. In addition, it can handle a continuous current as high as 6A while being housed in a small outline SOT-23 package.

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