HVVi Semiconductors introduced its High Frequency, High Voltage Vertical Field Effect Transistor (HVVFET) architecture with products designed to operate from 24V to 48V and which feature low thermal resistance and high ruggedness. According to the company, the gain, efficiency and power density characteristics offer an opportunity to eliminate amplification stages in Power Amplifiers (PAs). For pulsed applications in the L-band from 1,030 MHz to 1,090 MHz, the PVV1011-300 operates at 48V and delivers over 300W of pulsed output power while providing 15 dB of gain and 48 percent efficiency typical performance under pulsed signal conditions with a pulse width of 50 µs and a pulse period of 1 ms. The vertical device structure offers reliability and ruggedness. The device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. The PVV1214-25 and PVV1214-100 for L-band pulsed radar applications in the 1.2 GHz to 1.4 GHz frequency range operate off a 48V supply and produce 25W and 100W respectively.
 
HVVi Semiconductors
866-429-4884, www.hvvi.com